A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures.

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Disclosed is an apparatus for an application including a core device for the application. The apparatus includes a power (preferably RF energy) harvester connected to the core device to power the core device. Also disclosed is a method for an application. The method includes the steps of converting RF energy into usable energy. There is the step of powering the core device with the usable energy.

Powering devices using rf energy harvesting

A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.

Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment

This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current, and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs, and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide bandgap semiconductors is also discussed.

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Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.

Vapor phase growth on semiconductor wafers

A power storage device has a plurality of series-connected storage battery units, battery circuits associated with the storage battery units to control or monitor the storage battery units, respectively; a main circuit of a potential level different from that of the battery circuits; and a potential level changing circuits connecting the battery circuit to the main circuit. The power storage unit is small in construction and operates at a low power consumption in a high control accuracy.

Power storage device and method of measuring voltage of storage battery

A protection apparatus for storage battery for storing and feeding power comprises an anomaly detection unit for detecting an anomalous state in at least one of the voltage, a current flow, and the frequency in at least one of an input power and an output power of the storage battery, the temperature and the pressure in the storage battery, and an external force applied to the storage battery, and a short-circuit unit for shorting both electrodes of the storage battery when an anomaly is detected in at least one of the input power, the output power, and the storage battery.

Protection apparatus for a storage battery

An electric apparatus has a plurality of electric parts and a casing made of electrically conductive material for accommodating therein or mounting thereon a plurality of electric parts. The casing, which has a cavity therein, is provided with a plurality of projections for radiating heat generated by the electric parts in the cavity. The casing is provided with openings for allowing a heat conductive medium to flow into and out of the casing. Further, an electric apparatus has a plurality of electric parts and a casing made of electrically conductive material for accommodating therein or mounting thereon a plurality of electric parts. The casing is provided with openings for allowing a heat conductive medium to flow into and out of the casing. The casing is provided therein with a partition wall which is made of electrically conductive material for dividing the interior of the casing into a plurality of zones along a direction of a flow of the heat conductive medium.

Electric apparatus having heat radiating fin

We have developed a multichannel monolithic isolator that can provide 2.3 kV ac isolation and 100-MHz signal transmission. The isolator uses high-voltage, on-chip isolator technology including trench isolation with buried oxide on the silicon-on-oxide (SOI) substrate and 0.4 /spl mu/m CMOS driver and receiver circuits. This technology lets us produce a four-channel monolithic isolator with an area of 1.5 mm/sup 2/ and a consumption current of 0.5 mA per channel at a frequency of 50 MHz. These operating values suggest that the monolithic isolator can miniaturize the communication interface and reduce power consumption since discrete devices, such as transformers and opto-couplers, are unnecessary. We have also developed a one-chip modem interface LSI that includes the multichannel isolator and an analog front-end circuit.

Noboru Akiyama

Papers

Vapor phase growth on semiconductor wafers

Power storage device and method of measuring voltage of storage battery

Protection apparatus for a storage battery

Electric apparatus having heat radiating fin

A high-voltage monolithic isolator for a communication network interface