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Norman F. Prokop
Researcher at Glenn Research Center
Publications - 44
Citations - 528
Norman F. Prokop is an academic researcher from Glenn Research Center. The author has contributed to research in topics: JFET & Integrated circuit. The author has an hindex of 13, co-authored 43 publications receiving 449 citations.
Papers
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Proceedings ArticleDOI
TACSAT-4 solar cell experiment: Advanced solar cell technologies in a high radiation environment
Phillip P. Jenkins,Michael J. Krasowski,Norman F. Prokop,Robert J. Walters,Dan C. Spina,Michael I. Eskenazi,Robert Skalitzky,Timothy Duffey,Brian Davis,Stephen Koss,Scott R. Messenger,Eric Downard,Kevin Crist,Mark J. O'Neill,Bruce Fu,Doug Bentz +15 more
TL;DR: The TACSAT-4 solar cell experiment will measure the current and voltage characteristics of advanced EMCORE BTJM solar cells thinned to 100 microns and ATJM cells under an 8.5X ENTECH Stretched Lens as mentioned in this paper.
Cratos: A Simple Low Power Excavation and Hauling System for Lunar Oxygen Production and General Excavation Tasks
J. J. Caruso,Lawrence C. Greer,Wentworth T. John,Dan C. Spina,M. Krasowski,Phillip B. Abel,Norman F. Prokop,Joseph M. Flatico,Kurt R. Sacksteder +8 more
TL;DR: Cratos as mentioned in this paper was developed as a low center of gravity, small (.75m x.75m × 0.3m), low power tracked test vehicle for Moon and Mars exploration.
Journal ArticleDOI
Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C
Philip G. Neudeck,David J. Spry,Liang-Yu Chen,Carl W. Chang,Glenn M. Beheim,Robert S. Okojie,Laura J. Evans,Roger D. Meredith,Terry L. Ferrier,Michael J. Krasowski,Norman F. Prokop +10 more
TL;DR: In this article, the authors report on long-term 500 °C electrical operation of prototype 6HSiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs).
Assessment of Durable SiC JFET Technology for +600 C to -125 C Integrated Circuit Operation
TL;DR: In this paper, the 6H-SiC n-channel JFET integrated circuits with transistors and resistors in the same 6HSiC N-channel layer were demonstrated to operate at 500 C before experiencing interconnect-related failures.
TacSat-4 Solar Cell Experiment: Two Years in Orbit
Phillip P. Jenkins,Douglas C. Bentz,Jim Barnds,Christopher R. Binz,Scott R. Messenger,Jeffrey H. Warner,Michael J. Krasowski,Norman F. Prokop,Dan C. Spina,Mark J. O'Neill,Michael I. Eskenazi,Henry W. Brandhorst,Eric Downard,Kevin Crist +13 more
Abstract: The TacSat-4 spacecraft flies in a highly elliptical, 4-hour orbit, passing through proton and electron radiation belts 12 times per day. The TacSat-4 Solar Cell Experiment (TSCE) measures I-V curves on two, 3-cell strings of triple-junction cells, in flat-plate and concentrator configurations. Two additional triple-junction cells are measured at short circuit, testing a replacement cover glass technology. This paper reports on the first two years of experiment operations.