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Nuno M. R. Peres

Researcher at University of Minho

Publications -  318
Citations -  53880

Nuno M. R. Peres is an academic researcher from University of Minho. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 64, co-authored 304 publications receiving 48430 citations. Previous affiliations of Nuno M. R. Peres include Max Planck Society & Boston University.

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Magnetic-field-assisted transmission of THz waves through a graphene layer combined with a periodically perforated metallic film

TL;DR: In this article, the authors consider a graphene sheet encapsulated in a two-dimensional (2D) metallic grating and a substrate and show significant changes in the spectra of the Faraday rotation angle of the transmitted wave and of the magnetic circular dichroism should be expected in this situation compared to bare graphene.
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Exciton-polariton mediated interaction between two nitrogen-vacancy color centers in diamond using two-dimensional transition metal dichalcogenides

TL;DR: In this article, the Portuguese Foundation for Science and Technology (FCT) and N.M.B.A.R.P acknowledge support from the European Commission through the project Graphene-Driven Revolutions in ICT and Beyond.
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Spin waves in La2CuO4: band structure and correlation effects

TL;DR: In this article, the antiferromagnetic spin wave dispersion in the half-filled (electronic density n = 1) Hubbard model for a two-dimensional square lattice, using the random phase approximation (RPA) in a broken symmetry (spin density wave) ground state was calculated.
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Theoretical model of the polarizability due to transitions between exciton states in transition metal dichalcogenides: application to WSe 2

TL;DR: In this paper, a method to study the polarizability due to transitions between exciton states in transition metal dichalcogenides is presented, and the authors apply their method to the description of the excitation of 2p dark states.
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Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

TL;DR: In this paper, Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tuning the external gate voltage, which can be tuned from conductive to a highly resistive state.