Phosphor-converted white light-emitting diodes (pc-WLEDs) are emerging as an indispensable solid-state light source for the next generation lighting industry and display systems due to their unique properties including but not limited to energy savings, environment-friendliness, small volume, and long persistence. Until now, major challenges in pc-WLEDs have been to achieve high luminous efficacy, high chromatic stability, brilliant color-rending properties, and price competitiveness against fluorescent lamps, which rely critically on the phosphor properties. A comprehensive understanding of the nature and limitations of phosphors and the factors dominating the general trends in pc-WLEDs is of fundamental importance for advancing technological applications. This report aims to provide the most recent advances in the synthesis and application of phosphors for pc-WLEDs with emphasis specifically on: (a) principles to tune the excitation and emission spectra of phosphors: prediction according to crystal field theory, and structural chemistry characteristics (e.g. covalence of chemical bonds, electronegativity, and polarization effects of element); (b) pc-WLEDs with phosphors excited by blue-LED chips: phosphor characteristics, structure, and activated ions (i.e. Ce 3+ and Eu 2+ ), including YAG:Ce, other garnets, non-garnets, sulfides, and (oxy)nitrides; (c) pc-WLEDs with phosphors excited by near ultraviolet LED chips: single-phased white-emitting phosphors (e.g. Eu 2+ –Mn 2+ activated phosphors), red-green-blue phosphors, energy transfer, and mechanisms involved; and (d) new clues for designing novel high-performance phosphors for pc-WLEDs based on available LED chips. Emphasis shall also be placed on the relationships among crystal structure, luminescence properties, and device performances. In addition, applications, challenges and future advances of pc-WLEDs will be discussed.

Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties

More than one-fifth of US electricity is used to power artificial lighting. Light-emitting diodes based on group III/nitride semiconductors are bringing about a revolution in energy-efficient lighting.

Prospects for LED lighting

Yttrium aluminum garnet (YAG) doped with Ce3+ is the phosphor of choice for the conversion of blue to yellow light in the rapidly expanding market of white light LEDs, but it is generally thought to suffer from a low luminescence quenching temperature The luminescence quenching temperature is an important parameter, especially in high-power LEDs, but surprisingly no systematic research has been done to measure and understand the temperature quenching of the yellow Ce luminescence in YAG:Ce Here we report on the luminescence temperature quenching in YAG:Ce For a wide range of Ce concentrations (between 0033% and 33%) the temperature dependence of the emission intensity and the luminescence lifetimes are reported The intrinsic quenching temperature of the Ce luminescence is shown to be very high (>700 K) The lower quenching temperatures reported in the literature are explained by thermally activated concentration quenching (for highly doped systems) and the temperature dependence of the oscillator st

Temperature Quenching of Yellow Ce3+ Luminescence in YAG:Ce

To facilitate the next generation of high-power white-light-emitting diodes (white LEDs), the discovery of more efficient red-emitting phosphor materials is essential. In this regard, the hardly explored compound class of nitridoaluminates affords a new material with superior luminescence properties. Doped with Eu(2+), Sr[LiAl3N4] emerged as a new high-performance narrow-band red-emitting phosphor material, which can efficiently be excited by GaN-based blue LEDs. Owing to the highly efficient red emission at λ(max) ~ 650 nm with a full-width at half-maximum of ~1,180 cm(-1) (~50 nm) that shows only very low thermal quenching (>95% relative to the quantum efficiency at 200 °C), a prototype phosphor-converted LED (pc-LED), employing Sr[LiAl3N4]:Eu(2+) as the red-emitting component, already shows an increase of 14% in luminous efficacy compared with a commercially available high colour rendering index (CRI) LED, together with an excellent colour rendition (R(a)8 = 91, R9 = 57). Therefore, we predict great potential for industrial applications in high-power white pc-LEDs.

Narrow-band red-emitting Sr[LiAl3N4]:Eu2+ as a next-generation LED-phosphor material

The Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%–15%) layers grown on GaN (0001) is measured by a photoluminescence technique. The samples vary in InN composition, thickness, and threading dislocation density. Throughout this sample set, the measured Auger coefficient ranges from 1.4×10−30to2.0×10−30cm6s−1. The authors argue that an Auger coefficient of this magnitude, combined with the high carrier densities reached in blue and green InGaN∕GaN (0001) quantum well light-emitting diodes (LEDs), is the reason why the maximum external quantum efficiency in these devices is observed at very low current densities. Thus, Auger recombination is the primary nonradiative path for carriers at typical LED operating currents and is the reason behind the drop in efficiency with increasing current even under room-temperature (short-pulsed, low-duty-factor) injection conditions.

Auger recombination in InGaN measured by photoluminescence

Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2 white at 1 A forward current in 1times1 mm2 chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs

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O.B. Shchekin

Papers

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting