Preface to the Second Edition. Preface to the First Edition. 1 Introduction. 2 Network Analysis. 2.1 Network Variables. 2.2 Scattering Parameters. 2.3 Short-Circuit Admittance Parameters. 2.4 Open-Circuit Impedance Parameters. 2.5 ABCD Parameters. 2.6 Transmission-Line Networks. 2.7 Network Connections. 2.8 Network Parameter Conversions. 2.9 Symmetrical Network Analysis. 2.10 Multiport Networks. 2.11 Equivalent and Dual Network. 2.12 Multimode Networks. 3 Basic Concepts and Theories of Filters. 3.1 Transfer Functions. 3.2 Lowpass Prototype Filters and Elements. 3.3 Frequency and Element Transformations. 3.4 Immittance Inverters. 3.5 Richards' Transformation and Kuroda Identities. 3.6 Dissipation and Unloaded Quality Factor. 4 Transmission Lines and Components. 4.1 Microstrip Lines. 4.2 Coupled Lines. 4.3 Discontinuities and Components. 4.4 Other Types of Microstrip Lines. 4.5 Coplanar Waveguide (CPW). 4.6 Slotlines. 5 Lowpass and Bandpass Filters. 5.1 Lowpass Filters. 5.2 Bandpass Filters. 6 Highpass and Bandstop Filters. 6.1 Highpass Filters. 6.2 Bandstop Filters. 7 Coupled-Resonator Circuits. 7.1 General Coupling Matrix for Coupled-Resonator Filters. 7.2 General Theory of Couplings. 7.3 General Formulation for Extracting Coupling Coefficient k. 7.4 Formulation for Extracting External Quality Factor Qe. 7.5 Numerical Examples. 7.6 General Coupling Matrix Including Source and Load. 8 CAD for Low-Cost and High-Volume Production. 8.1 Computer-Aided Design (CAD) Tools. 8.2 Computer-Aided Analysis (CAA). 8.3 Filter Synthesis by Optimization. 8.4 CAD Examples. 9 Advanced RF/Microwave Filters. 9.1 Selective Filters with a Single Pair of Transmission Zeros. 9.2 Cascaded Quadruplet (CQ) Filters. 9.3 Trisection and Cascaded Trisection (CT) Filters. 9.4 Advanced Filters with Transmission-Line Inserted Inverters. 9.5 Linear-Phase Filters. 9.6 Extracted Pole Filters. 9.7 Canonical Filters. 9.8 Multiband Filters. 10 Compact Filters and Filter Miniaturization. 10.1 Miniature Open-Loop and Hairpin Resonator Filters. 10.2 Slow-Wave Resonator Filters. 10.3 Miniature Dual-Mode Resonator Filters. 10.4 Lumped-Element Filters. 10.5 Miniature Filters Using High Dielectric-Constant Substrates. 10.6 Multilayer Filters. 11 Superconducting Filters. 11.1 High-Temperature Superconducting (HTS) Materials. 11.2 HTS Filters for Mobile Communications. 11.3 HTS Filters for Satellite Communications. 11.4 HTS Filters for Radio Astronomy and Radar. 11.5 High-Power HTS Filters. 11.6 Cryogenic Package. 12 Ultra-Wideband (UWB) Filters. 12.1 UWB Filters with Short-Circuited Stubs. 12.2 UWB-Coupled Resonator Filters. 12.3 Quasilumped Element UWB Filters. 12.4 UWB Filters Using Cascaded Miniature High- And Lowpass Filters. 12.5 UWB Filters with Notch Band(s). 13 Tunable and Reconfigurable Filters. 13.1 Tunable Combline Filters. 13.2 Tunable Open-Loop Filters without Via-Hole Grounding. 13.3 Reconfigurable Dual-Mode Bandpass Filters. 13.4 Wideband Filters with Reconfigurable Bandwidth. 13.5 Reconfigurable UWB Filters. 13.6 RF MEMS Reconfigurable Filters. 13.7 Piezoelectric Transducer Tunable Filters. 13.8 Ferroelectric Tunable Filters. Appendix: Useful Constants and Data. A.1 Physical Constants. A.2 Conductivity of Metals at 25 C (298K). A.3 Electical Resistivity rho in 10-8 m of Metals. A.4 Properties of Dielectric Substrates. Index.

Microstrip filters for RF/microwave applications

A review of the properties of ferroelectric materials that are relevant to microwave tunable devices is presented: we discuss the theory of dielectric response of tunable bulk materials and thin films; the experimental results from the literature and from own work are reviewed; the correspondence between the theoretical results and the measured properties of tunable materials is critically analyzed; nominally pure, real (defected), and composite bulk materials and thin films are addressed. In addition, techniques for characterization of tunable ferroelectrics and applications of these materials are briefly presented.

Ferroelectric materials for microwave tunable applications

Benefits of ferroelectric component applications at microwaves is discussed. Experience recently gained in the high-temperature film-production technology has been used for obtaining high-quality ferroelectric tunable components. The disk made from bulk SrTiO3 single crystal covered with double-sided YBa2Cu3Y7 films was used as a high-quality TM010 mode tunable resonator. Planar structures containing thin film ferroelectric layers: planar capacitor, sandwich capacitor, coplanar line, and fin line have been studied. Modeling dielectric response of low-temperature incipient ferroelectrics (SrTiO3, KTaO3) has been applied for simulation of tunable planar structures. The quality factor of a tunable component (QFCT) is suggested to characterize the validity of the component for practical applications. The high-quality planar capacitors are pioneered for the applications. The wide frequency band fin line phase shifter has been studied and simulated. The prospects for applications of ferroelectric planar structures at room temperature is discussed.

Ferroelectric Tuning of Planar and Bulk Microwave Devices

When an electric field is applied to a ferroelectric material, the microwave permittivity undergoes a substantial change. This change in permittivity can be utilized in microwave devices to produce frequency-agile functions. This paper is a comprehensive review of the work on ferroelectric materials; this includes models of the ferroelectric permittivity and loss tangent, as well as methods of measurement of these properties. New measurements are presented on thin-film strontium titanate and single-crystal strontium barium titanate substrates. These results are compared with the model. A brief discussion is given of the applications of ferroelectric material in microwave devices.

http://iopscience.iop.org/article/10.1088/0953-2048/11/11/021/pdf

Thin-film ferroelectric microwave devices

The dc electric-field dependence of the relative dielectric constant ${\ensuremath{\varepsilon}}_{r}(E)$ in polar dielectrics is studied. The Landau-Ginzburg-Devonshire (LGD) theory and its approximate treatments in dealing with ${\ensuremath{\varepsilon}}_{r}(E)$ are reviewed. It is found that the LGD theory works well in the case of a single polarization mechanism existing in the dielectrics, and the Johnson relation ${\ensuremath{\varepsilon}}_{r}(E)={\ensuremath{\varepsilon}}_{r}(0)/{1+\ensuremath{\lambda}[{\ensuremath{\varepsilon}}_{0}{\ensuremath{\varepsilon}}_{r}(0){]}^{3}{E}^{2}{}}^{1/3}$ is a reasonable approximate expression describing ${\ensuremath{\varepsilon}}_{r}(E).$ Many polar dielectrics, however, exhibit more than one polarization mechanism contributing to the total dielectric constant. The dielectric response of such polar dielectrics under an external dc electric field cannot be purely described by LGD theory. In this work, we introduce a ``reorientational polarization'' to describe the ``extrinsic'' contribution to the dielectric constant, such as might arise from polar clusters, domain-wall motions, fluctuation of microcluster boundaries, defects, etc. A ``multipolarization-mechanism'' model is proposed, and a combined equation ${\ensuremath{\varepsilon}}_{r}(E)={\ensuremath{\varepsilon}}_{r}(0)/{1+\ensuremath{\lambda}[{\ensuremath{\varepsilon}}_{0}{\ensuremath{\varepsilon}}_{r}(0){]}^{3}{E}^{2}{}}^{1/3}+\ensuremath{\Sigma}{(P}_{0}x/{\ensuremath{\varepsilon}}_{0})[\mathrm{cosh}(\mathrm{Ex}){]}^{\ensuremath{-}2}$ is adopted to describe the total ${\ensuremath{\varepsilon}}_{r}(E)$ response of a polar dielectric, where the first term is Johnson's relation which represents the ``intrinsic'' polarization, and the latter represents the ``extrinsic'' polarization. Agreement between the fitting of this equation to the experimental data is obtained for paraelectrics ${\mathrm{KTaO}}_{3}$ and ${\mathrm{B}\mathrm{i}:\mathrm{S}\mathrm{r}\mathrm{T}\mathrm{i}\mathrm{O}}_{3}.$

dc electric-field dependence of the dielectric constant in polar dielectrics: Multipolarization mechanism model

The performance of a small-size electrically tunable microwave resonator is reported. The parallel plate dielectric resonator is made of bulk single crystal SrTiO/sub 3/ coated with thin YBa/sub 2/Cu/sub 3/O/sub 7-/x films. High Q-factor and high tunability at relatively low bias voltage are observed. The dependence of Q-factor on bias voltage is discussed.

1 GHz tunable resonator on bulk single crystal SrTiO3 plated with YBa2Cu3O7-x films

Lower order modes in a single crystal strontium titanate (STO) circular disk resonator are studied experimentally. Superconducting epitaxial YBCO films form the parallel-plates of the resonator. Due to the extremely high dielectric constant of STO, the electric fields are concentrated between the plates, while there is a substantial magnetic fringing field which affects both the resonant frequencies, Q-factors, and tunability of all modes, especially the TM/sub 110/ and TM/sub 210/.

Lower order modes of YBCO/STO/YBCO circular disk resonators

The effective dielectric constant of a microstrip is given as a function of the strip geometry and its orientation on the surface of the substrate. An "isotropized" dielectric constant is inroduced which can be used in commercial microwave software for simulation of r-cut sapphire substrate based micrstrip devices. Experimental velification of the analysis is also given.

Effective Dielectric Permittivity of r-Cut Sapphire Microstrip

Accurate design of microwave planar high-temperature superconducting (HTS) filters is obtained using a computer-aided design tool, which provides simulation of characteristics of the multicoupled transmission-line structures. The quasi-static spectral-domain method is applied. In order to achieve a good correspondence between measured and simulated filter performance, correct models of the microwave propagation characteristics of HTS planar transmission lines have to be used in the simulation procedure. The goal of this paper is to demonstrate that it is possible to design the planar HTS filters that do not need additional trimming after manufacturing. The trimmingless filters can be used in mass production for the next generation of mobile communication systems.

Development of CAD tool for a design of microwave planar HTS filters

Simple and correct formulas are derived for calculation of an effective isotropic dielectric constant, which characterizes the wave propagation in microstrip lines on anisotropic substrates made of r-cut sapphire crystals. The r-plane is extensively used for epitaxial growth of high-Tc superconductor YBa2Cu3O7 films as applied to microwave integrated circuits. In contradistinction to previous models developed for z-cut sapphire, the nondiagonal dielectric permittivity tensor of r-cut sapphire is used. The effective dielectric constant of a microstrip line on r-cut sapphire substrate is found as a function of the strip-line geometry and the orientation of the crystallographic axes with respect to the symmetry plane of the microstrip line

O.G. Vendik

Papers

1 GHz tunable resonator on bulk single crystal SrTiO3 plated with YBa2Cu3O7-x films

Lower order modes of YBCO/STO/YBCO circular disk resonators

Effective Dielectric Permittivity of r-Cut Sapphire Microstrip

Development of CAD tool for a design of microwave planar HTS filters

A CAD model for microstrips on r‐cut sapphire substrates