O
O. Hitzemann
Researcher at Technical University of Berlin
Publications - 6
Citations - 129
O. Hitzemann is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 4, co-authored 6 publications receiving 123 citations.
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Journal ArticleDOI
Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection
W. Unrau,David Quandt,Jan-Hindrik Schulze,Tobias Heindel,T. D. Germann,O. Hitzemann,André Strittmatter,Stephan Reitzenstein,U. W. Pohl,Dieter Bimberg +9 more
TL;DR: In this paper, an oxide aperture acting as a buried stressor structure is used to force site-controlled QD growth, leading to both QD self-alignment with respect to the current path in vertical injection pin-diodes and narrow, jitter-free emission lines.
Journal ArticleDOI
Lateral positioning of InGaAs quantum dots using a buried stressor
André Strittmatter,Andrei Schliwa,Jan-Hindrik Schulze,T. D. Germann,A. Dreismann,O. Hitzemann,E. Stock,Irina A. Ostapenko,Sven Rodt,W. Unrau,U. W. Pohl,Axel Hoffmann,Dieter Bimberg,V. A. Haisler +13 more
TL;DR: In this paper, a bottom-up approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization is presented, where a buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface.
Journal ArticleDOI
Site-controlled quantum dot growth on buried oxide stressor layers
André Strittmatter,André Holzbecher,Andrei Schliwa,Jan-Hindrik Schulze,David Quandt,T. D. Germann,A. Dreismann,O. Hitzemann,E. Stock,Irina A. Ostapenko,Sven Rodt,W. Unrau,Udo W. Pohl,Axel Hoffmann,Dieter Bimberg,V. A. Haisler +15 more
TL;DR: In this paper, site-controlled growth of quantum dots (QDs) for single photon emitters (SPEs) is achieved applying a buried stressor approach, which benefits enormously from a defect-free growth interface.
Journal ArticleDOI
The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
Goksel Durkaya,Goksel Durkaya,Max Buegler,Max Buegler,Ramazan Atalay,Indika Senevirathna,Mustafa Alevli,O. Hitzemann,Martin Kaiser,Ronny Kirste,Axel Hoffmann,Nikolaus Dietz +11 more
TL;DR: In this paper, the influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In 0.65 Ga 0.35 N epilayers has been investigated.
Proceedings ArticleDOI
Self-aligned quantum-dot growth for single-photon sources
U. W. Pohl,André Strittmatter,J.-H. Schulze,David Quandt,T. D. Germann,W. Unrau,Tobias Heindel,O. Hitzemann,Dieter Bimberg,Stephan Reitzenstein +9 more
TL;DR: In this paper, the buried oxide current-aperture in a pin diode-structure was used to create a strain field for the self-aligned nucleation of site-controlled single quantum dots.