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Irina A. Ostapenko
Researcher at Technical University of Berlin
Publications - 10
Citations - 448
Irina A. Ostapenko is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Quantum dot & Exciton. The author has an hindex of 7, co-authored 10 publications receiving 415 citations.
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Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
Markus R. Wagner,Gordon Callsen,Juan Sebastián Reparaz,Jan-Hindrik Schulze,Ronny Kirste,Munise Cobet,Irina A. Ostapenko,Sven Rodt,Christian Nenstiel,Martin Kaiser,Axel Hoffmann,Anna V. Rodina,Matthew R. Phillips,S. Lautenschläger,Sebastian Eisermann,Bruno K. Meyer +15 more
TL;DR: In this article, the authors present a comprehensive study of the properties of the deeply bound excitons with particular focus on the ${Y}_{0}$ transition at 3.33 and 3.35 eV.
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Single-photon emission from InGaAs quantum dots grown on (111) GaAs
E. Stock,T. Warming,Irina A. Ostapenko,Sven Rodt,Andrei Schliwa,J A Töfflinger,A. Lochmann,Aleksandr I. Toropov,Sergej A. Moshchenko,Dimitry V. Dmitriev,V. A. Haisler,Dieter Bimberg +11 more
TL;DR: In this article, self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs.
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Large internal dipole moment in InGaN/GaN quantum dots
Irina A. Ostapenko,Gerald Hönig,Christian Kindel,Sven Rodt,André Strittmatter,Axel Hoffmann,Dieter Bimberg +6 more
TL;DR: In this paper, a direct observation of large permanent dipole moments of excitonic complexes in InGaN/GaN quantum dots is reported, which is in good agreement with realistic calculations of quantum dot transition energies for position-dependent external electric fields.
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Exciton acoustic-phonon coupling in single GaN/AlN quantum dots
Irina A. Ostapenko,Gerald Hönig,Sven Rodt,Andrei Schliwa,Axel Hoffmann,Dieter Bimberg,Matthias-Rene Dachner,Marten Richter,Andreas Knorr,Satoshi Kako,Yasuhiko Arakawa +10 more
TL;DR: In this article, the coupling of acoustic phonons to excitons in single wurtzite-type GaN/AlN quantum dots is investigated in detail by cathodoluminescence experiments and compared to theory.
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Lateral positioning of InGaAs quantum dots using a buried stressor
André Strittmatter,Andrei Schliwa,Jan-Hindrik Schulze,T. D. Germann,A. Dreismann,O. Hitzemann,E. Stock,Irina A. Ostapenko,Sven Rodt,W. Unrau,U. W. Pohl,Axel Hoffmann,Dieter Bimberg,V. A. Haisler +13 more
TL;DR: In this paper, a bottom-up approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization is presented, where a buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface.