Showing papers by "Olivier J. F. Martin published in 1992"

Thermal behavior of visible AlGaInP-GaInP ridge laser diodes

Abstract: The thermal behavior of visible AlGaInP-GaInP ridge laser diodes was investigated numerically and experimentally. It is shown that various parameters critically influence the thermal resistance, R, of such devices. R is inversely proportional to the thermal conductivity of the heat sink. A substantial improvement in R is achieved for junction-side-down mounting compared to junction-side-up. R depends strongly on the width, w, of the ridge, and this effect is different for junction-side-up or junction-side-down mounting. In the first case, R approximately log(w) and in the second, R approximately 1/w. The thickness of the soldering material is a sensitive parameter which may increase the value of R by up to 15 K/W. For junction-side-up mounted devices, the top metallization layer has a very favorable effect: a 1- mu m-thick gold layer reduces R by 30%. It is shown that when a laser is switched on, the thermal steady state is reached in the millisecond time range. The experimental results show very good agreement with numerical data. >

Reflectance Modulation Studies On Laser Diode Mirrors

Abstract: Keywords: Alxga1-Xas Reference EPFL-CONF-164911View record in Web of Science Record created on 2011-04-11, modified on 2017-05-10

Papers Thermal Behavior of Visible AlGaInP-GaInP Ridge Laser Diodes

Abstract: The thermal behavior of visible AIGaInP-GaInP ridge laser diodes is investigated numerically and experimen- tally. It is shown that various parameters critically influence the thermal resistance R of such devices. R is inversely propor- tional to the thermal conductivity of the heatsink. A substantial improvement in R-quite larger than in the AlGaAs system-is achieved for junction-side-down mounting compared to junc- tion-side-up. R depends strongly on the width w of the ridge and this effect is different for junction-side-up or down mount- ing. In the first case, R - log (w) and in the second, R - l/w. The thickness of the soldering material is a sensitive parameter which may increase the value of R by up to 15 K/W. On the other hand, for junction-side-up mounted devices, the top me- tallization layer has a very favorable effect: a 1 pm thick gold layer reduces R by 30%. The dynamics of thermal phenomena is also studied. It is shown that when a laser is switched on the steady state is reached in the ms time range. Finally, our ex- perimental results show a very good agreement with our nu- merical data.