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Oswald H. W. Siegmund

Researcher at University of California, Berkeley

Publications -  241
Citations -  12585

Oswald H. W. Siegmund is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Microchannel plate detector & Detector. The author has an hindex of 45, co-authored 238 publications receiving 11858 citations. Previous affiliations of Oswald H. W. Siegmund include University of California, Los Angeles.

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Proceedings ArticleDOI

High-resolution monolithic delay-line readout techniques for two-dimensional microchannel plate detectors

TL;DR: In this article, the authors describe the development of high resolution double delay line (DDL) and cross delay line image readouts for applications in UV and soft X-ray imaging and spectroscopy.
Journal ArticleDOI

Atomic layer deposition of alternative glass microchannel plates

TL;DR: The use of ALD to deposit functional layers allows the optimal substrate material to be selected, such as borosilicate glass, which has many benefits compared to the lead-oxide glass used in conventional MCPs, including increased stability and lifetime, low background noise, mechanical robustness, and larger area.
Proceedings ArticleDOI

Characterizations of microchannel plate quantum efficiency

TL;DR: In this paper, an extensive set of quantum efficiency measurements which cover missions and devices produced over the past 20 years are presented. But the measurements are limited to the case of MCPs with 5-6 micron pore sizes.
Proceedings ArticleDOI

Performance results of the GALEX cross delay line detectors

TL;DR: The Galaxy Evolution Explorer (GALEX) far ultraviolet (FUV) and near ultraviolet (NUV) detectors were delivered to JPL/Caltech starting in the fall of 2000 and have undergone approximately 1000 hours of pre-flight system-level testing to date as discussed by the authors.
Proceedings ArticleDOI

Advances in microchannel plate detectors for UV/visible astronomy

TL;DR: In this paper, a 25mm format with ~7μm pores, achieving gain of nearly 104 for a single Si MCP, was made, which is the best for any MCP.