The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free of subgap states (hard gap) has proven difficult. Here we solve this challenge by developing a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions and, importantly, a hard induced superconducting gap in quantum point contacts. Furthermore, we demonstrate phase control of a Josephson junction and study transport in a gated two-dimensional superconductor-semiconductor array towards scalable architectures. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing. 

https://www.nature.com/articles/s43246-023-00351-w.pdf

Hard superconducting gap in germanium

Abstract The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like spin-orbit coupling and g -factor, depends on the coupling between the materials. It is predicted that this coupling can be adjusted through the use of electric fields. We study this phenomenon in InSb/Al/Pt hybrids using nonlocal spectroscopy. We show that these hybrids can be tuned such that the semiconductor and superconductor are strongly coupled. In this case, the induced gap is similar to the superconducting gap in the Al/Pt shell and closes only at high magnetic fields. In contrast, the coupling can be suppressed which leads to a strong reduction of the induced gap and critical magnetic field. At the crossover between the strong-coupling and weak-coupling regimes, we observe the closing and reopening of the induced gap in the bulk of a nanowire. Contrary to expectations, it is not accompanied by the formation of zero-bias peaks in the local conductance spectra. As a result, this cannot be attributed conclusively to the anticipated topological phase transition and we discuss possible alternative explanations. 

/pdf/electrostatic-control-of-the-proximity-effect-in-the-bulk-of-14piw4rx.pdf

Electrostatic control of the proximity effect in the bulk of semiconductor-superconductor hybrids

Abstract There has been recent interest in superconductor-magnetic insulator hybrid Rashba nanowire setups for potentially hosting Majorana zero modes at smaller external Zeeman fields. Using the non-equilibrium Green’s function technique, we develop a quantum transport model that accounts for the interplay between the quasiparticle dynamics in the superconductor-magnetic insulator bilayer structure and the transport processes through the Rashba nanowire. We provide an analysis of three-terminal setups to probe the local and non-local conductance in clean and disordered nanowires. We uncover the gap closing and reopening followed by the emergence of near-zero energy states, which can be attributed to topological zero modes in the clean limit. In the presence of a disordered potential, trivial Andreev bound states may form with signatures reminiscent of topological zero modes. Our results provide transport-based analysis of regimes that support the formation of Majorana modes in these hybrid systems while investigating the effect of disorder on devices. 

/pdf/conductance-spectroscopy-of-majorana-zero-modes-in-1ljc3y1w.pdf

Conductance spectroscopy of Majorana zero modes in superconductor-magnetic insulator nanowire hybrid systems

Tunnel spectroscopy data for the detection of Majorana bound states (MBS) is often criticized for its proneness to misinterpretation of genuine MBS with low-lying Andreev bound states. Here, we suggest a protocol removing this ambiguity by extending single shot measurements to sequences performed at varying system parameters. We demonstrate how such sampling, which we argue requires only moderate effort for current experimental platforms, resolves the statistics of Andreev side lobes, thus providing compelling evidence for the presence or absence of a Majorana center peak.

Statistical Majorana Bound State Spectroscopy.

Fusion protocol for Majorana modes in coupled quantum dots

We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin \textit{et al.} [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at \textit{both} ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-$60\,\mu$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.

Outi Reentila

Papers

InAs-Al hybrid devices passing the topological gap protocol