E
Elvedin Memisevic
Researcher at Lund University
Publications - 26
Citations - 637
Elvedin Memisevic is an academic researcher from Lund University. The author has contributed to research in topics: Nanowire & Transconductance. The author has an hindex of 11, co-authored 25 publications receiving 485 citations. Previous affiliations of Elvedin Memisevic include Delft University of Technology.
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Proceedings ArticleDOI
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I on = 10 μA/μm for I off = 1 nA/μm at V ds = 0.3 V
TL;DR: In this paper, a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm) is presented, which exhibits a minimum sub-threshold swing of 48 mV/dec. for V ds = 0.1 and 0.3 V.
Journal ArticleDOI
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
TL;DR: In this paper, a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation frequency of 155 GHz was demonstrated.
Journal ArticleDOI
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Elvedin Memisevic,Markus Hellenbrand,Erik Lind,Axel R. Persson,Saurabh Sant,Andreas Schenk,Johannes Svensson,Reine Wallenberg,Lars-Erik Wernersson +8 more
TL;DR: The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact onThe performance.
Journal ArticleDOI
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
TL;DR: In this paper, the authors demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field effect transistors integrated on Si substrates.
Journal ArticleDOI
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects.
Ali Saeidi,Teodor Rosca,Elvedin Memisevic,Igor Stolichnov,Matteo Cavalieri,Lars-Erik Wernersson,Adrian M. Ionescu +6 more
TL;DR: State-of-the-art InAs/InGaAsSb/GaSb nanowire TFETs are employed as the baseline transistor and PZT and silicon-doped HfO2 as ferroelectric materials.