Roland Zeisel

TL;DR: In this article, the authors report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn),N QWs.

TL;DR: In this article, the authors investigated the role of various mechanisms including Shockley-Read-Hall recombination, thermionic escape from the quantum well, phonon assisted tunneling, and thermionic trap-assisted tunneling; in addition, to explain the thermal droop, they proposed a closed-form model which is able to accurately fit the experimental data by using values extracted from measurements and simulations and a limited set of fitting parameters.

TL;DR: In this article, the deep levels related to non-radiative recombination in InGaN/GaN light-emitting diodes (LEDs) were investigated.

TL;DR: The results suggest that the optical degradation can be ascribed to the increase in non-radiative recombination, rather than to a decrease in carrier injection efficiency.

TL;DR: In this article, a systematic study of the determination of the internal quantum efficiency (IQE) in AlGaN-based multiple-quantum-well (MQW) structures using different optical evaluation methodologies and experimental conditions, in order to derive a standard set of measurement conditions for reliable IQE determination, is presented.