The absorption and emission properties of transition metal (TM)-doped zinc chalcogenides have been investigated to understand their potential application as room-temperature, mid-infrared tunable laser media. Crystals of ZnS, ZnSe, and ZnTe, individually doped with Cr/sup 2+/, Co/sup 2+/, Ni/sup 2+/, or Fe/sup 2+/ have been evaluated. The absorption and emission properties are presented and discussed in terms of the energy levels from which they arise. The absorption spectra of the crystals studied exhibit strong bands between 1.4 and 2.0 /spl mu/m which overlap with the output of strained-layer InGaAs diodes. The room-temperature emission spectra reveal wide-band emissions from 2-3 /spl mu/m for Cr and from 2.8-4.0 /spl mu/m for Co, Cr luminesces strongly at room temperature; Co exhibits significant losses from nonradiative decay at temperatures above 200 K, and Ni and Fe only luminesce at low temperatures, Cr/sup 2+/ is estimated to have the highest quantum yield at room temperature among the media investigated with values of /spl sim/75-100%. Laser demonstrations of Cr:ZnS and Cr:ZnSe have been performed in a laser-pumped laser cavity with a Co:MgF/sub 2/ pump laser. The output of both lasers were determined to peak at wavelengths near 2.35 /spl mu/m, and both lasers demonstrated a maximum slope efficiency of approximately 20%. Based on these initial results, the Cr/sup 2+/ ion is predicted to be a highly favorable laser ion for the mid-IR when doped into the zinc chalcogenides; Co/sup 2+/ may also serve usefully, but laser demonstrations yet remain to be performed.

Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media

Transition metal-doped zinc chalcogenides: spectroscopy and laser demonstration of a new class of gain media

Transition-metal-doped zinc chalcogenide crystals have recently been investigated as potential mid-infrared lasers. Tetrahedrally coordinated Cr/sup 2+/ ions are especially attractive as lasants on account of high luminescence quantum yields for emission in the 2000-3000-nm range. Radiative lifetimes and emission cross sections of the upper /sup 5/E state are respectively /spl sim/10 /spl mu/s and /spl sim/10/sup -18/ cm/sup 2/. The associated absorption band peaked at /spl sim/1800 mm enables laser-diode pumping of the Cr/sup 2+/ systems. Laser demonstrations with ZnS:Cr and ZnSe:Cr (using a MgF/sub 2/:Co/sup 2+/ laser pump source) gave slope efficiencies up to 30%. Excited-state-absorption losses appear small, and passive losses dominate at present. Tuning experiments with a diffraction grating produce a tuning range covering at least 2150-2800 nm. Laser crystals can be produced by Bridgman growth, seeded physical vapor transport, or diffusion doping. Zinc chalcogenide thermomechanical properties of interest for medium-to-high-power operation compare favorably with those of other host materials, except for the larger refractive-index derivative dn/dT.

Cr/sup 2+/-doped zinc chalcogenides as efficient, widely tunable mid-infrared lasers

We present a comprehensive model for the calculation of the bandedge profile of both the In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As quantum-well systems with an arbitrary composition. Using a many-body optical gain model, we compare the measured net modal gain for both material systems with calculations from the realistic band structure including valence band mixing effects. Calibrated measurements of the side light spontaneous emission spectrum based on its fundamental relation to the optical gain spectrum give values for the radiative current density. These measurements allow us to extract the relationship between total current density and carrier density. A fit of this relation yields values for the Auger coefficient for each material system.

Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers

GaAsBiN is a potentially interesting alloy which may be exploited in near- and mid-infrared photonic devices. Here we present the predicted band parameters such as band gap (Eg), the spin-orbit splitting energy (ΔSO), band offsets and strain of GaAsBiN on GaAs versus N and Bi compositions based on recent experimental data. We also show how bismuth may be used to form alloys whereby ΔSO > Eg thereby providing a means of suppressing non-radiative CHSH (hot-hole producing) Auger recombination and inter-valence band absorption. We determine the optimum conditions where ΔSO > Eg, which is expected to improve the high-temperature performance and thermal stability of light emitting devices. It is also shown that preferential band offsets are achievable with GaAsBiN, which makes this material system promising for photonic devices operating in the near- and mid-infrared.

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained. >

P.J.A. Thiis

Papers

Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers