Journal ArticleDOI
Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
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In this paper, the progress in longwavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed.Abstract:
The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained. >read more
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Journal Article
Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media
TL;DR: In this paper, the absorption and emission properties of transition metal (TM)-doped zinc chalcogenides have been investigated to understand their potential application as room-temperature, mid-infrared tunable laser media.
Journal ArticleDOI
Transition metal-doped zinc chalcogenides: spectroscopy and laser demonstration of a new class of gain media
TL;DR: In this article, the absorption and emission properties of transition metal (TM)-doped zinc chalcogenides have been investigated to understand their potential application as room-temperature, mid-infrared tunable laser media.
Journal ArticleDOI
Cr/sup 2+/-doped zinc chalcogenides as efficient, widely tunable mid-infrared lasers
Ralph H. Page,Kathleen I. Schaffers,Laura D. DeLoach,G.D. Wilke,F.D. Patel,J.B. Tassano,Stephen A. Payne,William F. Krupke,K.-T. Chen,Arnold Burger +9 more
TL;DR: In this paper, transition-metal-doped zinc chalcogenide (ZnS:Cr) and ZnSe:Cr (using a MgF/sub 2/:Co/sup 2+/ laser pump source) were used for mid-infrared laser applications.
Journal ArticleDOI
Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers
TL;DR: In this article, the authors presented a comprehensive model for the calculation of the bandedge profile of both the In/sub 1-x/Ga/sub x/As/sub y/P/Sub 1-y/ and In/ sub 1 -x/y/Al/Sub y/As quantum-well systems with an arbitrary composition.
Journal ArticleDOI
Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared
Stephen J. Sweeney,S. R. Jin +1 more
TL;DR: In this article, the predicted band parameters such as band gap, spin-orbit splitting energy (ΔSO), band offsets and strain of GaAsBiN on GaAs versus N and Bi compositions based on recent experimental data are presented.
References
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Journal ArticleDOI
Theory of the linewidth of semiconductor lasers
TL;DR: In this article, a theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers.
Journal ArticleDOI
Lightwave systems with optical amplifiers
TL;DR: In this article, the noise and bit-error-rate characteristics of fiber-optic communication systems using semiconductor laser amplifiers are investigated theoretically and experimentally, and the dependence of system performance on amplifier characteristics such as optical bandwidth, noise figure, gain, etc., is shown.
Journal ArticleDOI
Gain spectra in GaAs double−heterostructure injection lasers
Basil W. Hakki,Thomas L. Paoli +1 more
TL;DR: Gain spectra for GaAs double-heterostructure junction lasers have been obtained with high resolution by using an automated data aquisition system to analyze the Fabry−Perot resonance modulation in the spontaneous emission spectra as mentioned in this paper.
Journal ArticleDOI
Material parameters of In1−xGaxAsyP1−y and related binaries
TL;DR: In this paper, various models for calculation of physical parameters in compound alloys are discussed and the results for In1−x Gax Asy P1−y quaternaries are presented.