Have you ever felt that the very title, Progress in Optics, conjured an image in your mind? Don’t you see a row of handsomely printed books, bearing the editorial stamp of one of the most brilliant members of the optics community, and chronicling the field of optics since the invention of the laser? If so, you are certain to move the bookend to make room for Volume 16, the latest of this series. It contains seven chapters on widely diverging topics, written by well-known authorities in their fields. These are: 1) Laser Selective Photophysics and Photochemistry by V. S. Letokhov, 2) Recent Advances in Phase Profiles (sic) Generation by J. J. Clair and C. I. Abitbol, 3 ) Computer-Generated Holograms: Techniques and Applications by W.-H. Lee, 4) Speckle Interferometry by A. E. Ennos, 5 ) Deformation  Invariant, Space-Variant Optical  Pattern Recognition by D. Casasent and D. Psaltis, 6) Light Emission from High-Current Surface-Spark Discharges by R. E. Beverly, and 7) Semiclassical Radiation  Theory within a  QuantumMechanical Framework by I. R. Senitzkt. The  breadth of topic  matter  spanned  by  these  chapters makes it impossible, for this reviewer at least, to pass judgement on the comprehensiveness, relevance, and completeness of every chapter. With an editorial board as prominent as that of Progress in Optics, however, it seems hardly likely that such comments should be necessary. It should certainly be possible to take the authority of each author as credible. The only remaining judgment to be  made on these chapters is their readability. In short, what are they like to read? The first sentence of the first chapter greets the eye with an obvious typographical error: “The creation of coherent laser light source, that have tunable radiation, opened the . . . .” Two pages later we find: “When two types of atoms or molecules of different isotopic composition ( A and B ) have even one spectral line that does not overlap with others, it is pos-

Progress in optics

This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, IV-VI, V-2 -VI3, I-II-V, and elemental group IV semiconductors are described, paying particular attention to the most thoroughly investigated system (Ga, Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and nontrivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga, Mn)N, where low-temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities.

Dilute ferromagnetic semiconductors: Physics and spintronic structures

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

/pdf/room-temperature-antiferromagnetic-memory-resistor-4xznkp703b.pdf

Room-temperature antiferromagnetic memory resistor

Preface. Contents of volumes 1-6. 1. Magnetism in ultrathin transition metal films (U. Gradmann). 2. Energy band theory of metallic magnetism in the elements (V.L. Moruzzi, P.M. Marcus). 3. Density functional theory of the ground state magnetic properties of rare earths and actinides (M.S.S. Brooks, B. Johansson). 4. Diluted magnetic semiconductors (J. Kossut, W. Dobrowolski). 5. Magnetic properties of binary rare-earth 3d-transition-metal intermetallic compounds (J.J.M. Franse, R.J. Radwanski). 6. Neutron scattering on heavy fermion and valence fluctuation 4f-systems (M. Loewenhaupt, K.H. Fischer). Author index. Subject index. Materials index.

Handbook of Magnetic Materials

We present an extensive experimental and theoretical study of surface acoustic wave driven ferromagnetic resonance. In a first modeling approach based on the Landau-Lifshitz-Gilbert equation, we derive expressions for the magnetization dynamics upon magnetoelastic driving that are used to calculate the absorbed microwave power upon magnetic resonance as well as the spin-current density generated by the precessing magnetization in the vicinity of a ferromagnet/normal metal interface. In a second modeling approach, we deal with the backaction of the magnetization dynamics on the elastic wave by solving the elastic wave equation and the Landau-Lifshitz-Gilbert equation self-consistently, obtaining analytical solutions for the acoustic wave phase shift and attenuation. We compare both modeling approaches with the complex forward transmission of a LiNbO${}_{3}$/Ni surface acoustic wave hybrid device recorded experimentally as a function of the external magnetic field orientation and magnitude, rotating the field within three different planes and employing three different surface acoustic wave frequencies. We find quantitative agreement of the experimentally observed power absorption and surface acoustic wave phase shift with our modeling predictions using one set of parameters for all field configurations and frequencies.

Surface acoustic wave driven ferromagnetic resonance in nickel thin films: Theory and experiment

We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yielding directly the noncrystalline and crystalline AMR components which are then analyzed independently. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. Generic implications of our findings for other dilute moment systems are discussed.

https://arxiv.org/pdf/cond-mat/0702357.pdf

Anisotropic magnetoresistance components in (Ga,Mn)As.

We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible Mn Ga dopings. The material synthesis was optimized for each nominal Mn doping in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blueshift for increasing Mn doping. In the visible range, a peak in the magnetic circular dichroism also shifts with increasing Mn doping. The results are consistent with the description of ferromagnetic (Ga,Mn)As based on the microscopic valence band theory. They also imply that opposite trends seen previously in the optical data on a limited number of samples are not generic and cannot serve as an experimental basis for postulating the impurity band model of ferromagnetic (Ga,Mn)As.

P. Vašek

Papers

Anisotropic magnetoresistance components in (Ga,Mn)As.

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As.