Vít Novák

TL;DR: In this paper, the authors demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter.

TL;DR: In this paper, the equivalence of antiferromagnets and ferromagnetic spintronics for effects that are an even function of the magnetic moment has been demonstrated based on even-in-moment relativistic transport phenomena.

TL;DR: The observation of an antidamping spin-orbit torque that stems from the Berry curvature, in analogy to the origin of the intrinsic spin Hall effect is reported, which is expected to be of comparable strength to the spin-Hall-effect-driven antidamping torque in ferromagnets interfaced with paramagnets with strong intrinsicspin Hall effect.

TL;DR: The utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploring spin Hall and spin precession phenomena in an electrically tunable semiconductor layer are shown.

TL;DR: A current-induced spin-torque mechanism is responsible for the switching in the authors' memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz, which opens the path toward the development of memory-logic technology reaching the elusive terAhertz band.