T
Tomas Jungwirth
Researcher at Academy of Sciences of the Czech Republic
Publications - 286
Citations - 26729
Tomas Jungwirth is an academic researcher from Academy of Sciences of the Czech Republic. The author has contributed to research in topics: Spintronics & Ferromagnetism. The author has an hindex of 70, co-authored 272 publications receiving 22461 citations. Previous affiliations of Tomas Jungwirth include University of Texas at Austin & Lucideon.
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Spin Hall effects
TL;DR: In solid-state materials with strong relativistic spin-orbit coupling, charge currents generate transverse spin currents as discussed by the authors and the associated spin Hall and inverse spin Hall effects distinguish between charge and spin current where electron charge is a conserved quantity but its spin direction is not.
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Universal intrinsic spin Hall effect.
Jairo Sinova,Jairo Sinova,Dimitrie Culcer,Qian Niu,Nikolai A. Sinitsyn,Tomas Jungwirth,Allan H. MacDonald +6 more
TL;DR: It is argued that in a high-mobility two-dimensional electron system with substantial Rashba spin-orbit coupling, a spin current that flows perpendicular to the charge current is intrinsic, and the intrinsic spin-Hall conductivity has a universal value for zero quasiparticle spectral broadening.
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Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system.
TL;DR: In this article, the spin-orbit split heavy-hole states lie in the plane of the 2D layer of a light-emitting diode and a nonzero out-of-plane component of the angular momentum is detected.
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Theory of ferromagnetic (III, Mn) V semiconductors
TL;DR: In this article, the current status of the field of (III,Mn)V diluted magnetic semiconductors is reviewed, focusing on the first two, more mature research directions: the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, and the development of spintronic devices with new functionalities.
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Electrical switching of an antiferromagnet.
Peter Wadley,B. Howells,J. Železný,J. Železný,C. Andrews,V. Hills,R. P. Campion,Vít Novák,K. Olejník,Francesco Maccherozzi,Sarnjeet S. Dhesi,S. Y. Martin,Thomas Wagner,Thomas Wagner,Joerg Wunderlich,Joerg Wunderlich,Frank Freimuth,Yuriy Mokrousov,Jan Kuneš,J.S. Chauhan,M.J. Grzybowski,M.J. Grzybowski,A. W. Rushforth,K. W. Edmonds,B. L. Gallagher,Tomas Jungwirth +25 more
TL;DR: In this paper, the authors demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter.