P
Pablo Palacios
Researcher at Technical University of Madrid
Publications - 70
Citations - 1924
Pablo Palacios is an academic researcher from Technical University of Madrid. The author has contributed to research in topics: Band gap & Density functional theory. The author has an hindex of 22, co-authored 62 publications receiving 1665 citations. Previous affiliations of Pablo Palacios include ETSI & Aeronáutica.
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Self-consistent relativistic band structure of the CH3NH3PbI3 perovskite
Eduardo Menéndez-Proupin,Eduardo Menéndez-Proupin,Pablo Palacios,Perla Wahnón,José C. Conesa +4 more
TL;DR: In this paper, the electronic structure and properties of the orthorhombic phase of the perovskite are computed with density functional theory, and the structure, optimized using a van der Waals functional, reproduces closely the unit cell volume.
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Transition-Metal-Substituted Indium Thiospinels as Novel Intermediate-Band Materials : Prediction and Understanding of Their Electronic Properties
TL;DR: To the knowledge, this work demonstrates for the first time the formation of an isolated intermediate electronic band structure through M substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum.
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Theoretical modelling of intermediate band solar cell materials based on metal-doped chalcopyrite compounds
TL;DR: In this paper, the electronic structure calculations are carried out for CuGaS2 partially substituted with Ti, V, Cr or Mn to ascertain if some of these systems could provide an intermediate band material able to give a high efficiency photovoltaic cell.
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Synthesis and Spectral Properties of Nanocrystalline V-Substituted In2S3, a Novel Material for More Efficient Use of Solar Radiation
TL;DR: In this paper, a V-substituted In2S3 is synthesized, being the first one to achieve solar light harvesting in photocatalysis and photovoltaics.
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Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)
TL;DR: In this paper, the properties of Si implanted with several chalcogen species (S, Se, Te) at doses considerably above the equilibrium solubility limit, especially when coimplanted with the group III atoms B and Al.