抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

(b) Write out the equations for the time dependence of ρ11, ρ22, ρ12 and ρ21 assuming that a light field interaction V = -μ12Ee iωt + c.c. couples only levels |1> and |2>, and that the excited levels exhibit spontaneous decay. (8 marks) (c) Under steady-state conditions, find the ratio of populations in states |2> and |3>. (3 marks) (d) Find the slowly varying amplitude ̃ ρ 12 of the polarization ρ12 = ̃ ρ 12e iωt . (6 marks) (e) In the limiting case that no decay is possible from intermediate level |3>, what is the ground state population ρ11(∞)? (2 marks) 2. (15 marks total) In a 2-level atom system subjected to a strong field, dressed states are created in the form |D1(n)> = sin θ |1,n> + cos θ |2,n-1> |D2(n)> = cos θ |1,n> sin θ |2,n-1>

The Quantum Theory of Light

Single-photon sources have recently been demonstrated using a variety of devices, including molecules1,2,3, mesoscopic quantum wells4, colour centres5, trapped ions6 and semiconductor quantum dots7,8,9,10,11. Compared with a Poisson-distributed source of the same intensity, these sources rarely emit two or more photons in the same pulse. Numerous applications for single-photon sources have been proposed in the field of quantum information, but most—including linear-optical quantum computation12—also require consecutive photons to have identical wave packets. For a source based on a single quantum emitter, the emitter must therefore be excited in a rapid or deterministic way, and interact little with its surrounding environment. Here we test the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity through a Hong–Ou–Mandel-type two-photon interference experiment13,14. We find that consecutive photons are largely indistinguishable, with a mean wave-packet overlap as large as 0.81, making this source useful in a variety of experiments in quantum optics and quantum information.

Indistinguishable photons from a single-photon device

The ability to detect and size individual nanoparticles with high resolution is crucial to understanding the behaviour of single particles and effectively using their strong size-dependent properties to develop innovative products. We report realtime, in situ detection and sizing of single nanoparticles, down to 30 nm in radius, using mode splitting in a monolithic ultrahigh-quality-factor (Q) whispering-gallery-mode microresonator. Particle binding splits a whispering-gallery mode into two spectrally shifted resonance modes, forming a self-referenced detection scheme. This technique provides superior noise suppression and enables the extraction of accurate particle size information with a single-shot measurement in a microscale device. Our method requires neither labelling of the particles nor a priori information on their presence in the medium, providing an effective platform to study nanoparticles at single-particle resolution. With the rapid progress in nanotechnology, nanoparticles of different materials and sizes have been synthesized and engineered as key components in various applications ranging from solar cell

On-chip single nanoparticle detection and sizing by mode splitting in an ultrahigh- Q microresonator

The recent development of techniques to produce optical semiconductor cavities of very high quality has prepared the stage for observing cavity quantum-electrodynamic effects in solid-state materials. Among the most promising systems for these studies are semiconductor quantum dots inside photonic crystal, micropillar or microdisk resonators. We review the progress so far in obtaining true quantum-optical strong-coupling effects in semiconductors. We discuss the recent results on vacuum Rabi splitting with a single quantum dot, emphasizing the differences from quantum-well systems. Finally, we propose nonlinear tests for the true quantum limit and speculate about applications in quantum information devices.

Vacuum Rabi splitting in semiconductors

We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-acoustic phonon interactions.

/pdf/ultralong-dephasing-time-in-ingaas-quantum-dots-1m563mqjyh.pdf

Ultralong Dephasing Time in InGaAs Quantum Dots

We present measurements and calculations of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature. Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparisons with calculations show that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.

Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

The distribution of the fine-structure splitting ħδ1 and of the biexciton binding energy ħδB are measured in a series of annealed InAs quantum dots. We find a decrease of ħδ1 from 96μeV to 6μeV with increasing annealing temperature, indicating a symmetrizing of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole.

Control of fine-structure splitting and biexciton binding in In x Ga 1 − x As quantum dots by annealing

The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast recovery of the spectral hole within /spl sim/100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low-dimensional systems.

/pdf/spectral-hole-burning-and-carrier-heating-dynamics-in-ingaas-a6ru6apzua.pdf

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

The ultrafast dynamics of gain and refractive index in an electrically pumped InAs-InGaAs quantum-dot (QD) optical amplifier are measured at room temperature using differential transmission with femtosecond time resolution. Both absorption and gain regions are investigated. While the absorption bleaching recovery occurs on a picosecond time scale, the gain compression recovers with /spl sim/100-fs time constant, making devices based on such dots promising for high-speed optical communications.

/pdf/ultrafast-gain-dynamics-in-inas-ingaas-quantum-dot-3pfluhvdo6.pdf

Paola Borri

Papers

Ultralong Dephasing Time in InGaAs Quantum Dots

Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

Control of fine-structure splitting and biexciton binding in In x Ga 1 − x As quantum dots by annealing

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers