Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Fast parallel algorithms for short-range molecular dynamics

(b) Write out the equations for the time dependence of ρ11, ρ22, ρ12 and ρ21 assuming that a light field interaction V = -μ12Ee iωt + c.c. couples only levels |1> and |2>, and that the excited levels exhibit spontaneous decay. (8 marks) (c) Under steady-state conditions, find the ratio of populations in states |2> and |3>. (3 marks) (d) Find the slowly varying amplitude ̃ ρ 12 of the polarization ρ12 = ̃ ρ 12e iωt . (6 marks) (e) In the limiting case that no decay is possible from intermediate level |3>, what is the ground state population ρ11(∞)? (2 marks) 2. (15 marks total) In a 2-level atom system subjected to a strong field, dressed states are created in the form |D1(n)> = sin θ |1,n> + cos θ |2,n-1> |D2(n)> = cos θ |1,n> sin θ |2,n-1>

The Quantum Theory of Light

Single-photon sources have recently been demonstrated using a variety of devices, including molecules1,2,3, mesoscopic quantum wells4, colour centres5, trapped ions6 and semiconductor quantum dots7,8,9,10,11. Compared with a Poisson-distributed source of the same intensity, these sources rarely emit two or more photons in the same pulse. Numerous applications for single-photon sources have been proposed in the field of quantum information, but most—including linear-optical quantum computation12—also require consecutive photons to have identical wave packets. For a source based on a single quantum emitter, the emitter must therefore be excited in a rapid or deterministic way, and interact little with its surrounding environment. Here we test the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity through a Hong–Ou–Mandel-type two-photon interference experiment13,14. We find that consecutive photons are largely indistinguishable, with a mean wave-packet overlap as large as 0.81, making this source useful in a variety of experiments in quantum optics and quantum information.

Indistinguishable photons from a single-photon device

Entangled photon pairs are an important resource in quantum optics, and are essential for quantum information applications such as quantum key distribution and controlled quantum logic operations. The radiative decay of biexcitons-that is, states consisting of two bound electron-hole pairs-in a quantum dot has been proposed as a source of triggered polarization-entangled photon pairs. To date, however, experiments have indicated that a splitting of the intermediate exciton energy yields only classically correlated emission. Here we demonstrate triggered photon pair emission from single quantum dots suggestive of polarization entanglement. We achieve this by tuning the splitting to zero, through either application of an in-plane magnetic field or careful control of growth conditions. Entangled photon pairs generated 'on demand' have significant fundamental advantages over other schemes, which can suffer from multiple pair emission, or require post-selection techniques or the use of photon-number discriminating detectors. Furthermore, control over the pair generation time is essential for scaling many quantum information schemes beyond a few gates. Our results suggest that a triggered entangled photon pair source could be implemented by a simple semiconductor light-emitting diode.

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A semiconductor source of triggered entangled photon pairs

Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.

High-performance semiconductor quantum-dot single-photon sources.

We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-acoustic phonon interactions.

/pdf/ultralong-dephasing-time-in-ingaas-quantum-dots-1m563mqjyh.pdf

Ultralong Dephasing Time in InGaAs Quantum Dots

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum-dot lasers are achieved by the application of an annealing and growth interruption step at 600 °C after the deposition of the dots. The transparency current is reduced to below 20 A/cm2 at room temperature. The internal differential quantum efficiency is increased from below 50% to above 90% by improvement of the barrier material and subsequent reduction of leakage current. A peak power of 3.7 W at 1140 nm lasing wavelength in pulsed operation at room temperature is demonstrated.

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

We present measurements and calculations of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature. Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparisons with calculations show that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.

Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

Biexcitons localized in single InAs/GaAs quantum dots (QD's) are investigated by cathodoluminescence, demonstrating an anticorrelation of the biexciton binding energy and the exciton transition energy. The binding energy decreases with increasing transition energy changing its sign at about 1.24 eV. The ``binding'' to ``antibinding'' transition is attributed to three-dimensional confinement, quenching correlation, and exchange and causing local charge separation. Model calculations of the biexciton in truncated InAs/GaAs QD's demonstrate the observed trend to result from the decreasing number of localized excited states with decreasing QD size. The interaction with resonant states in the wetting layer is found to be negligible.

Repulsive exciton-exciton interaction in quantum dots

Comparative near-field and beam-quality (M2) measurements on narrow stripe quantum-dot (QD) and quantum-well (QW) lasers of identical structure, both emitting at 1100 nm, are presented. Intrinsic suppression of filamentation in the QD lasers is observed. QD lasers emitting at 1300 nm again show no filamentation. For a 6-μm-stripe, QW laser, M2 increases from 2.6 to 6.1 with output power increasing from 5 to 60 mW and with increasing stripe width (20 mW, 3→10 μm, M2=2.6→4.7). In the QD lasers, filamentation is suppressed up to 8 μm (1100 nm) and 9 μm (1300 nm) stripe width and no dependence on output power is observed.

Roman Sellin

Papers

Ultralong Dephasing Time in InGaAs Quantum Dots

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

Repulsive exciton-exciton interaction in quantum dots

Complete suppression of filamentation and superior beam quality in quantum-dot lasers