P
Partha Mukhopadhyay
Researcher at University of Central Florida
Publications - 54
Citations - 593
Partha Mukhopadhyay is an academic researcher from University of Central Florida. The author has contributed to research in topics: High-electron-mobility transistor & Molecular beam epitaxy. The author has an hindex of 11, co-authored 52 publications receiving 427 citations. Previous affiliations of Partha Mukhopadhyay include Indian Institute of Technology Kharagpur & Indian Institutes of Technology.
Papers
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Journal ArticleDOI
Fast growth rate of epitaxial β-Ga 2 O 3 by close coupled showerhead MOCVD
Fikadu Alema,B. Hertog,Andrei Osinsky,Partha Mukhopadhyay,Mykyta Toporkov,Winston V. Schoenfeld +5 more
TL;DR: In this article, the growth of epitaxial β-Ga 2 O 3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor was reported.
Journal ArticleDOI
Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film
Fikadu Alema,B. Hertog,Oleg Ledyaev,Dmitry Volovik,Grant Thoma,Ross Miller,Andrei Osinsky,Partha Mukhopadhyay,Sara Bakhshi,Haider Ali,Winston V. Schoenfeld +10 more
TL;DR: In this article, the fabrication and characterization of solar blind photodetectors (SBPs) based on undoped β-Ga2O3 and Zn doped (∼5 × 1020 cm−3) epitaxial films with cutoff wavelength of ∼260 nm were reported.
Journal ArticleDOI
Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
Fikadu Alema,B. Hertog,Partha Mukhopadhyay,Yuewei Zhang,Akhil Mauze,Andrei Osinsky,Winston V. Schoenfeld,James S. Speck,Timothy Vogt +8 more
TL;DR: In this paper, a high performance Pt/n−Ga2O3/n+Ga 2O3 solar blind Schottky photodiode has been grown by metalorganic chemical vapor deposition.
Journal ArticleDOI
High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations
Sanjay Kumar Jana,Partha Mukhopadhyay,Saptarsi Ghosh,Sanjib Kabi,Ankush Bag,Rajesh Kumar,Dhrubes Biswas +6 more
TL;DR: In this article, a comparative study on the effects of In incorporation in the channel layer of AlGaN/GaN type-II heterostructures grown on c-plane sapphire by plasma assisted molecular beam epitaxy is presented.
Proceedings ArticleDOI
Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film
Fikadu Alema,B. Hertog,Andrei Osinsky,Partha Mukhopadhyay,Mykyta Toporkov,Winston V. Schoenfeld,Elaheh Ahmadi,James S. Speck +7 more
TL;DR: In this article, a high quality germanium doped β-Ga2O3 epitaxial film was grown by PMBE technique and fabricated into a vertical type Schottky photodiode with a Pt/nGa 2O3/n+Ga 2 O3(010) structure.