The development of novel materials is a fundamental focal point of chemical research; and this interest is mandated by advancements in all areas of industry and technology. A good example of the synergism between scientific discovery and technological development is the electronics industry, where discoveries of new semiconducting materials resulted in the evolution from vacuum tubes to diodes and transistors, and eventually to miniature chips. The progression of this technology led to the development * To whom correspondence should be addressed. B.L.C.: (504) 2801385 (phone); (504) 280-3185 (fax); bcushing@uno.edu (e-mail). C.J.O.: (504)280-6846(phone);(504)280-3185(fax);coconnor@uno.edu (e-mail). 3893 Chem. Rev. 2004, 104, 3893−3946

http://depa.fquim.unam.mx/amyd//archivero/FidelmarLechugaSanabria_4940.pdf

Recent advances in the liquid-phase syntheses of inorganic nanoparticles.

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

This is a review of Collected Works of John Tate. Parts I, II, edited by Barry Mazur and Jean-Pierre Serre. American Mathematical Society, Providence, Rhode Island, 2016. For several decades it has been clear to the friends and colleagues of John Tate that a “Collected Works” was merited. The award of the Abel Prize to Tate in 2010 added impetus, and finally, in Tate’s ninety-second year we have these two magnificent volumes, edited by Barry Mazur and Jean-Pierre Serre. Beyond Tate’s published articles, they include five unpublished articles and a selection of his letters, most accompanied by Tate’s comments, and a collection of photographs of Tate. For an overview of Tate’s work, the editors refer the reader to [4]. Before discussing the volumes, I describe some of Tate’s work. 1. Hecke L-series and Tate’s thesis Like many budding number theorists, Tate’s favorite theorem when young was Gauss’s law of quadratic reciprocity. When he arrived at Princeton as a graduate student in 1946, he was fortunate to find there the person, Emil Artin, who had discovered the most general reciprocity law, so solving Hilbert’s ninth problem. By 1920, the German school of algebraic number theorists (Hilbert, Weber, . . .) together with its brilliant student Takagi had succeeded in classifying the abelian extensions of a number field K: to each group I of ideal classes in K, there is attached an extension L of K (the class field of I); the group I determines the arithmetic of the extension L/K, and the Galois group of L/K is isomorphic to I. Artin’s contribution was to prove (in 1927) that there is a natural isomorphism from I to the Galois group of L/K. When the base field contains an appropriate root of 1, Artin’s isomorphism gives a reciprocity law, and all possible reciprocity laws arise this way. In the 1930s, Chevalley reworked abelian class field theory. In particular, he replaced “ideals” with his “idèles” which greatly clarified the relation between the local and global aspects of the theory. For his thesis, Artin suggested that Tate do the same for Hecke L-series. When Hecke proved that the abelian L-functions of number fields (generalizations of Dirichlet’s L-functions) have an analytic continuation throughout the plane with a functional equation of the expected type, he saw that his methods applied even to a new kind of L-function, now named after him. Once Tate had developed his harmonic analysis of local fields and of the idèle group, he was able prove analytic continuation and functional equations for all the relevant L-series without Hecke’s complicated theta-formulas. Received by the editors September 5, 2016. 2010 Mathematics Subject Classification. Primary 01A75, 11-06, 14-06. c ©2017 American Mathematical Society

The collected works

Interpretation of X-ray Powder Diffraction Patterns . By H. Lipson and H. Steeple. Pp. viii + 335 + 3 plates. (Mac-millan: London; St Martins Press: New York, May 1970.) £4.

X-Ray Diffraction

It is widely accepted that for electric vehicles to be accepted by consumers and to achieve wide market penetration, ranges of at least 500 km at an affordable cost are required. Therefore, significant improvements to lithium-ion batteries (LIBs) in terms of energy density and cost along the battery value chain are required, while other key performance indicators, such as lifetime, safety, fast-charging ability and low-temperature performance, need to be enhanced or at least sustained. Here, we review advances and challenges in LIB materials for automotive applications, in particular with respect to cost and performance parameters. The production processes of anode and cathode materials are discussed, focusing on material abundance and cost. Advantages and challenges of different types of electrolyte for automotive batteries are examined. Finally, energy densities and costs of promising battery chemistries are critically evaluated along with an assessment of the potential to fulfil the ambitious targets of electric vehicle propulsion. Electrification is seen as the future of automotive industry, and deployment of electric vehicles largely depends on the development of rechargeable batteries. Here, the authors survey the state-of-the-art advances in active materials, electrolytes and cell chemistries for automotive batteries.

Performance and cost of materials for lithium-based rechargeable automotive batteries

The formation of pure single crystalline silicon nanoparticles by microwave induced decomposition of silane in a low pressure flow reactor is reported. The morphology and crystal structure of the particles are characterized in situ by particle mass spectrometry (PMS) and ex situ by means of X-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, and infrared spectroscopy. The preparation method allows for the adjustment of the mean

Synthesis of high purity silicon nanoparticles in a low pressure microwave reactor.

From the view point of combustion science, the fundamentals of particle formation in a flame environment are discussed. The principles of converting a gas phase precursor dopant into particles and also their growth are addressed. Various experimental methods and examples for the synthesis of particles of both single and mixed oxides are reviewed. First attempts to tune the stoichiometry of oxide particles by varying the combustion parameters of premixed flames are demonstrated. Some aspects of modelling and the problems which still need to be solved are illustrated by means of the particles’ population balance equation.

Particle synthesis in flames

ZnO nano-particles have been synthesized in low pressure flow reactors utilizing Zn(CH3)2 as precursor. Two different synthesis routes have been employed. A low pressure flame reactor and a microwave reactor were used for synthesis of ZnO particle in Zn(CH3)2 doped H2/O2/Ar flames and Zn(CH3)2 doped Ar/O2 plasmas, respectively. The particle formation process has been investigated in situ by a particle mass spectrometer. Also, sampled powders have been investigated ex situ by means of FT-IR, XRD, TEM, and UV-VIS. For both synthesis routes nanometer sized ZnO particles were found with particle diameters in the range between 4 to 8 nm. In cases of the flame reactor the results suggest a strong influence of water on the particle formation process.

Paul Roth

Papers

Synthesis of high purity silicon nanoparticles in a low pressure microwave reactor.

Particle synthesis in flames

Formation and properties of ZnO nano-particles from gas phase synthesis processes

Autoignition of gasoline surrogates mixtures at intermediate temperatures and high pressures

Shock-tube study of the autoignition of n-heptane/toluene/air mixtures at intermediate temperatures and high pressures