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Paul V. Dressendorfer
Researcher at Sandia National Laboratories
Publications - 43
Citations - 4610
Paul V. Dressendorfer is an academic researcher from Sandia National Laboratories. The author has contributed to research in topics: Silicon & CMOS. The author has an hindex of 28, co-authored 43 publications receiving 4484 citations.
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Ionizing radiation effects in MOS devices and circuits
TL;DR: In this article, Hughes et al. present a survey of the effects of radiation on MOS devices and circuits, including hardening technology, process-induced radiation effects, and interface traps.
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Hole traps and trivalent silicon centers in metal/oxide/silicon devices
TL;DR: In this paper, electron spin resonance (ESR) measurements of E′ center (a "trivalent silicon" center in SiO2) density as well as capacitance versus voltage (C•V) measurements on γ-irradiated metal/oxide/silicon (MOS) structures were reported.
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Correlating the Radiation Response of MOS Capacitors and Transistors
TL;DR: In this paper, a new technique is presented for separating the thresholdvoltage shift of an MOS transistor into shifts due to interface states and trapped-oxide charge, and the radiation responses of MOS capacitors and transistors fabricated on the same wafer are compared.
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Device modeling of ferroelectric capacitors
TL;DR: In this article, a physically based methodology is developed for modeling the behavior of electrical circuits containing nonideal ferroelectric capacitors, illustrated by modeling the discrete capacitors as a stacked dielectric structure.
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Physical Mechanisms Contributing to Device "Rebound"
Abstract: The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.