P
Pavol Šajgalík
Researcher at Slovak Academy of Sciences
Publications - 211
Citations - 3242
Pavol Šajgalík is an academic researcher from Slovak Academy of Sciences. The author has contributed to research in topics: Ceramic & Sintering. The author has an hindex of 29, co-authored 202 publications receiving 2814 citations. Previous affiliations of Pavol Šajgalík include Max Planck Society.
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Two‐Stage Sintering of Alumina with Submicrometer Grain Size
TL;DR: In this paper, the applicability of two-stage sintering as a means of suppressing the final stage grain growth of submicrometer alumina was verified and fine-grained alumina with a relative density of 98.8% and a grain size of 0.9 μm was prepared.
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Relationship between Microstructure, Toughening Mechanisms, and Fracture Toughness of Reinforced Silicon Nitride Ceramics
TL;DR: In this article, pull-out and elastic bridging were most frequently observed as the toughening mechanisms in samples with fine-grained microstructures having needlelike {beta}-Si{sub 3}N{sub 4} grains with diameters of 1 microm.
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Magnetic properties of Co1−xZnxFe2O4 spinel ferrite nanoparticles synthesized by starch-assisted sol–gel autocombustion method and its ball milling
Raghvendra Singh Yadav,Jaromir Havlica,Miroslav Hnatko,Pavol Šajgalík,Cigáň Alexander,Martin Palou,Eva Bartoníčková,Martin Boháč,Františka Frajkorová,Jiri Masilko,Martin Zmrzlý,Lukáš Kalina,Miroslava Hajdúchová,Vojtěch Enev +13 more
TL;DR: In this paper, a starch-assisted sol-gel autocombustion method was used to obtain spinel ferrite nanoparticles for ball-milling at 800°C.
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The properties of Ti-doped ZnO films deposited by simultaneous RF and DC magnetron sputtering
TL;DR: In this paper, the authors showed that the structure of ZnO:Ti films was significantly affected by the amount of Ti contents, which indicated that the increase of the Ti contents made the structure random.
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The properties of heavily Al-doped ZnO films before and after annealing in the different atmosphere
TL;DR: In this article, a radio frequency power (r.f.) of 200 W was supplied to ZnO target, and a direct current (d.c.) power of 40 W was provided to Al target for the preparation of heavily Al-doped (ZnO:Al) films.