P
Peisheng Xin
Researcher at East China Normal University
Publications - 6
Citations - 99
Peisheng Xin is an academic researcher from East China Normal University. The author has contributed to research in topics: Silicon & Etching (microfabrication). The author has an hindex of 4, co-authored 6 publications receiving 98 citations.
Papers
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Journal ArticleDOI
Obtaining a high area ratio free-standing silicon microchannel plate via a modified electrochemical procedure
Xiaoming Chen,Jilei Lin,Ding Yuan,Pengliang Ci,Peisheng Xin,Shaohui Xu,Lianwei Wang,Lianwei Wang +7 more
TL;DR: In this article, a process based on electrochemical etching, developed to generate a gap between the device layer and the substrate, is presented, where a sample containing a microchannel throughhole structure can be directly obtained with a laser cut by scanning the laser beam on the surface without cutting through the wafer.
Journal ArticleDOI
Large-size P-type silicon microchannel plates prepared by photoelectrochemical etching
TL;DR: In this paper, the influence of backside illumination and temperature on the fabrication of large and high aspect ratio silicon microchannel plates (MCPs) by photoelectrochemical (PEC) process is described.
Proceedings ArticleDOI
Oxidation of high area ratio silicon microchannels fabricated by electrochemical etching
TL;DR: In this article, the oxidation of high area ratio silicon microchannels used in weak light detection and night vision is studied, and the influences of oxidation time and environments on the microstructures are investigated and analyzed combined with computer simulation.
Proceedings ArticleDOI
Investigation of the formation of undercut during the fabrication of silicon microchannels by electrochemical etching
TL;DR: In this paper, the formation of the undercut is found to be primarily determined by both current density and HF concentration, which determine the MCP structure thickness as well as the conditions under which the undercut occurs.
Proceedings ArticleDOI
Fabrication and characterization of 3D pn junction structure for radiation detection
Tingting Liu,Tao Liu,Jinlong Li,Jilei Lin,Xiaoming Chen,Xinglong Guo,Peisheng Xin,Shaohui Xu,Weijia Xue,Lianwei Wang +9 more
TL;DR: In this paper, a phosphorus diffusion step is employed for the formation of three dimensional pn junction structures on this macroporous silicon, which can increase the effective junction area and the collective efficiency remarkably.