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Peisheng Xin

Researcher at East China Normal University

Publications -  6
Citations -  99

Peisheng Xin is an academic researcher from East China Normal University. The author has contributed to research in topics: Silicon & Etching (microfabrication). The author has an hindex of 4, co-authored 6 publications receiving 98 citations.

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Journal ArticleDOI

Obtaining a high area ratio free-standing silicon microchannel plate via a modified electrochemical procedure

TL;DR: In this article, a process based on electrochemical etching, developed to generate a gap between the device layer and the substrate, is presented, where a sample containing a microchannel throughhole structure can be directly obtained with a laser cut by scanning the laser beam on the surface without cutting through the wafer.
Journal ArticleDOI

Large-size P-type silicon microchannel plates prepared by photoelectrochemical etching

TL;DR: In this paper, the influence of backside illumination and temperature on the fabrication of large and high aspect ratio silicon microchannel plates (MCPs) by photoelectrochemical (PEC) process is described.
Proceedings ArticleDOI

Oxidation of high area ratio silicon microchannels fabricated by electrochemical etching

TL;DR: In this article, the oxidation of high area ratio silicon microchannels used in weak light detection and night vision is studied, and the influences of oxidation time and environments on the microstructures are investigated and analyzed combined with computer simulation.
Proceedings ArticleDOI

Investigation of the formation of undercut during the fabrication of silicon microchannels by electrochemical etching

TL;DR: In this paper, the formation of the undercut is found to be primarily determined by both current density and HF concentration, which determine the MCP structure thickness as well as the conditions under which the undercut occurs.
Proceedings ArticleDOI

Fabrication and characterization of 3D pn junction structure for radiation detection

TL;DR: In this paper, a phosphorus diffusion step is employed for the formation of three dimensional pn junction structures on this macroporous silicon, which can increase the effective junction area and the collective efficiency remarkably.