P
Péter B. Barna
Researcher at Hungarian Academy of Sciences
Publications - 185
Citations - 4877
Péter B. Barna is an academic researcher from Hungarian Academy of Sciences. The author has contributed to research in topics: Thin film & Sputtering. The author has an hindex of 27, co-authored 185 publications receiving 4610 citations. Previous affiliations of Péter B. Barna include Energy Institute.
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Microstructural evolution during film growth
TL;DR: In this paper, the authors review the present understanding of film growth processes and their role in microstructural evolution as a function of deposition variables including temperature, the presence of reactive species, and the use of low-energy ion irradiation during growth.
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Fundamental structure forming phenomena of polycrystalline films and the structure zone models
Péter B. Barna,Miklos Adamik +1 more
TL;DR: In this article, the authors constructed a real structure zone model by considering the concentration of impurities (co-deposited additives) in the vapour beam as a new deposition parameter, and the fundamental structure forming phenomena.
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Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films
Arutiun P. Ehiasarian,A. Vetushka,Y. Aranda Gonzalvo,György Sáfrán,L. Székely,Péter B. Barna +5 more
TL;DR: In this paper, the growth of TiN by HIPIMS of Ti in mixed Ar and N2 atmosphere has been investigated, where the peak discharge current was increased from 5 to 30 A. The average power was maintained constant by adjusting the frequency.
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Formation Processes of Vacuum-Deposited Indium Films and Thermodynamical Properties of Submicroscopic Particles Observed by In Situ Electron Microscopy
TL;DR: In this paper, the formation of vacuum-deposited In thin films was studied by in situ electron microscopy, and a preferred orientation was found to develop at a given crystallite size depending on the substrate temperature and the ratio of impinging oxygen molecules to film atoms.
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Crystallization processes in a-Ge thin films
TL;DR: In this paper, the authors studied the nucleation rate and the rate of crystal growth in a-Ge films, paying particular attention to the effects of residual gases, and the activation energies for the relevant processes were obtained.