P
Peter Finkel
Researcher at United States Naval Research Laboratory
Publications - 83
Citations - 1917
Peter Finkel is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Ferroelectricity & Piezoelectricity. The author has an hindex of 23, co-authored 83 publications receiving 1734 citations. Previous affiliations of Peter Finkel include Drexel University & United States Department of the Navy.
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Electrical transport, thermal transport, and elastic properties of M 2 Al C ( M = Ti , Cr, Nb, and V)
Jeffrey Hettinger,Samuel E. Lofland,Peter Finkel,T. Meehan,J. Palma,K. Harrell,Surojit Gupta,A. Ganguly,T. El-Raghy,Michel W. Barsoum +9 more
TL;DR: In this article, the electrical conductivity, Hall coefficient, and magnetoresistances are analyzed under a two-band framework assuming a temperature-independent charge carrier concentration, and the densities and mobilities of electrons and holes are almost equal.
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On the elastic properties and mechanical damping of Ti3SiC2, Ti3GeC2, Ti3Si0.5Al0.5C2 and Ti2AlC in the 300–1573 K temperature range
Miladin Radovic,Michel W. Barsoum,A. Ganguly,T. Zhen,Peter Finkel,Surya R. Kalidindi,Edgar Lara-Curzio +6 more
TL;DR: In this paper, the authors report on the temperature dependencies of Young's, E, and shear moduli, μ, of polycrystalline Si 3 SiC 2, Ti 2 AlC, Ti 3 GeC 2 and Ti 3 Si 0.5 Al 0.
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Elastic and electronic properties of select M2AX phases
Samuel E. Lofland,Jeffrey Hettinger,K. Harrell,Peter Finkel,Surojit Gupta,Michel W. Barsoum,G. Hug +6 more
TL;DR: In this article, the density of states at the Fermi level, N(EF) varies from ≈1.4 (eV formula unit)−1 to 6 (EV formula units) −1.
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Electron-phonon coupling in M n + 1 A X n -phase carbides
Samuel E. Lofland,Jeffrey Hettinger,T. Meehan,A.P. Bryan,Peter Finkel,Surojit Gupta,Michel W. Barsoum,Gilles Hug +7 more
TL;DR: In this paper, the electrical resistivity, magnetotransport, and heat capacity in several compounds of the type ${M} n+1}A{C}_{n}$ were investigated.
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Electronic, thermal, and elastic properties of Ti 3 Si 1 − x Ge x C 2 solid solutions
Peter Finkel,B. Seaman,K. Harrell,J. Palma,Jeffrey Hettinger,Samuel E. Lofland,A. Ganguly,Michel W. Barsoum,Zhimei Sun,Sa Li,Rajeev Ahuja +10 more
TL;DR: In this paper, the conductivities, Hall coefficients, and magnetoresistances of a two-band regime with temperature-independent charge carrier concentrations were analyzed for a compensated material, where the concentration of electrons is nearly equal to that of the holes.