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Ph. Goudeau

Researcher at University of Poitiers

Publications -  32
Citations -  1770

Ph. Goudeau is an academic researcher from University of Poitiers. The author has contributed to research in topics: Thin film & Sputtering. The author has an hindex of 22, co-authored 32 publications receiving 1684 citations. Previous affiliations of Ph. Goudeau include Centre national de la recherche scientifique.

Papers
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Characterisation of Ti1−xSixNy nanocomposite films

TL;DR: In this paper, a two-phase system composed of a nanocrystalline f.c. structure was synthesized by RF reactive sputtering from Ti and Si elemental targets, in an Ar/N 2 gas mixture.
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Structural, optical and mechanical properties of coloured TiNxOy thin films

TL;DR: In this paper, coloured films based on single layered titanium oxynitride (TiN x O y ) compounds were prepared by r.f. magnetron sputtering under variation of process parameters such as bias voltage and flow rate of reactive gases.
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Influence of nitrogen content on the structural, mechanical and electrical properties of TiN thin films

TL;DR: In this article, the preparation of TiNx thin films by d.c. reactive magnetron sputtering is described, where the coating thickness ranged from 1.7 to 4.2 am and the nitrogen content varied between 0 and 55 at.%.
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New apparatus for grazing X-ray reflectometry in the angle-resolved dispersive mode

TL;DR: In this article, a new apparatus is proposed for grazing X-ray measurements of thin films on flat substrates, where the multiple-beam interferences of parallel layers and/or the Bragg peaks of multilayers are measured in the angular dispersive mode with a position-sensitive proportional counter.
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Structural analysis of Ti1−xSixNy nanocomposite films prepared by reactive magnetron sputtering

TL;DR: In this paper, the preparation of thin films resulting from additions of Si to the TiN matrix, by r.f. reactive magnetron sputtering, was reported, and it was shown that a mixture of two phases is present, where the first phase is most likely fcc TiN. The higher lattice parameter of this phase, about 0.429nm, could be explained by taking into account that a correction of the residual stress effect on peak positions might slightly decrease the value of the lattice parameters (around 1%).