Philip Kratz

TL;DR: Transport measurements in ultraclean double-gated bilayer graphene are reported and source-drain bias is used as a spectroscopic tool to resolve a gap of ∼2 meV at the charge neutrality point, which represents the firstSpectroscopic mapping of the ground states in bilayers graphene in the presence of both electric and magnetic fields.

TL;DR: In this paper, the authors report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to $270\text{ }000,000, 000, 000/€ 1/3/€ 2/€ 3/€ 4.

TL;DR: This paper reports on a study of epitaxially grown ultrathin Pb films that are only a few atoms thick and have parallel critical magnetic fields much higher than the expected limit set by the interaction of electron spins with a magnetic field, that is, the Clogston–Chandrasekhar limit.

TL;DR: Electron microscope imaging of suspended graphene devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large, which suggests a switching mechanism via atomic movement and/or chemical rearrangement and underscores the potential of all-carbon devices for integration with graphene electronics.

TL;DR: Transport measurements in high quality bilayer graphene pnp junctions with suspended top gates demonstrate band gap opening by an applied perpendicular electric field with an On/Off ratio up to 20,000 at 260 mK and observes quantum Hall conductance with fractional values.