P
Philippe Jansen
Researcher at Katholieke Universiteit Leuven
Publications - 7
Citations - 39
Philippe Jansen is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Etching (microfabrication) & Reactive-ion etching. The author has an hindex of 2, co-authored 7 publications receiving 39 citations. Previous affiliations of Philippe Jansen include IMEC.
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Patent
Etching process of CoSi2 layers
Ricardo Alves Donaton,Karen Irma Josef Maex,Rita Verbeeck,Philippe Jansen,Rita Rooyackers,Deferm Ludo,Mikhail R. Baklanov +6 more
TL;DR: In this article, a method for controlling the etching rate of CoSi 2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate is presented.
Proceedings ArticleDOI
Investigation of intrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides
Stefan Kubicek,W.K. Henson,A. De Keersgieter,Gonçal Badenes,Philippe Jansen,H. van Meer,D. Kerr,A. Naem,Ludo Deferm,K. De Meyer +9 more
TL;DR: In this paper, the authors investigated the influence of experimental splits in source/drain (S/D) extension dose, S/D HDD dose and spike RTA on the reduction of series resistance and poly-depletion effect.
Patent
Etching process of CoSi2 layers and process for the fabrication of Schottky-barrier detectors using the same
Mikhail R. Baklanov,Deferm Ludo,Ricardo Alves Donaton,Philippe Jansen,Karen Irma Josef Maex,Rita Rooyackers,Rita Verbeeck +6 more
TL;DR: In this paper, the pH value of the HF-based solution is used to regulate the etching rate of CoSi2 layers in semiconductor processing by means of a HF-Based solution.
Journal ArticleDOI
AlGaAs/GaAs: High electron mobility transistor simulations with PRISM
Philippe Jansen,N. Maene,Walter De Raedt,S. Naten,D. Stubbe,Wim Schoenmaker,M. Van Rossum,K. De Meyer +7 more
TL;DR: The two-dimensional device simulator PRISM (PRogram for Investigating Semiconductor Models) has been adapted to simulate III-V heterojunction FET's and the main advantages are the flexibility in defining sloped device contours and the possibilic to refine the mesh only locally, so that the number of nodes only increases moderately, as opposed to the situation with finite difference simulators.