R
Rita Rooyackers
Researcher at Katholieke Universiteit Leuven
Publications - 210
Citations - 3299
Rita Rooyackers is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: MOSFET & Transconductance. The author has an hindex of 30, co-authored 209 publications receiving 3058 citations. Previous affiliations of Rita Rooyackers include IMEC.
Papers
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Journal ArticleDOI
Impact of Line-Edge Roughness on FinFET Matching Performance
Emanuele Baravelli,Abhisek Dixit,Rita Rooyackers,Malgorzata Jurczak,Nicolo'Attilio Speciale,K. De Meyer +5 more
TL;DR: It is shown that fin-LER will dominate the intra-bit-cell stochastic mismatch in FinFET static random access memories at the LSTP-32-nm node, and the spacer-defined process has the potential to improve FinFet matching performance by 90%.
Journal ArticleDOI
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
Anne Vandooren,Daniele Leonelli,Rita Rooyackers,Andriy Hikavyy,Katia Devriendt,Marc Demand,Roger Loo,Guido Groeseneken,Cedric Huyghebaert +8 more
TL;DR: In this article, the authors report on the integration of vertical nTunnel FETs (TFETs) with SiGe hetero-junction and analyzes the presence of trap-assisted tunneling impacting the device behavior.
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Drain voltage dependent analytical model of tunnel field-effect transistors
TL;DR: In this paper, the impact of drain voltage on TFET performance was analyzed for both pure line-tunneling and pure point-tuned TFETs, and the model highlights and explains the superlinear onset of the output characteristics, thereby enabling an improved analysis of experimental data.
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Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET
Amey Mahadev Walke,Anne Vandooren,Rita Rooyackers,Daniele Leonelli,Andriy Hikavyy,Roger Loo,Anne S. Verhulst,Kuo-Hsing Kao,Cedric Huyghebaert,Guido Groeseneken,Valipe Ramgopal Rao,Krishna Kumar Bhuwalka,Marc Heyns,Nadine Collaert,Aaron Thean +14 more
TL;DR: In this article, a Si/Si0.55Ge0.45 heterojunction line tunnel field effect transistor (TFET) was constructed with a 1-μm gate length and showed an increase in tunneling current in excess of 20 μA/μm at VGS=VDS=1.2 V.
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Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width
Daniele Leonelli,Anne Vandooren,Rita Rooyackers,Anne S. Verhulst,Stefan De Gendt,Marc Heyns,Guido Groeseneken +6 more
TL;DR: In this paper, the electrical characterization of complementary multiple-gate tunneling field effect transistors (MuGTFETs), implemented in a MuGFET technology compatible with standard complementary metal oxide semiconductor (CMOS) processing, is discussed.