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Pierre Renucci

Researcher at University of Toulouse

Publications -  124
Citations -  4508

Pierre Renucci is an academic researcher from University of Toulouse. The author has contributed to research in topics: Exciton & Spin polarization. The author has an hindex of 32, co-authored 115 publications receiving 3911 citations. Previous affiliations of Pierre Renucci include Intelligence and National Security Alliance & Centre national de la recherche scientifique.

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Excitonic Linewidth Approaching the Homogeneous Limit in MoS 2 -Based van der Waals Heterostructures

TL;DR: In this article, the authors show that encapsulation of monolayer MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as they measure in photoluminescence and reflectivity a FWHM down to 2 meV at T=4
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Exciton radiative lifetime in transition metal dichalcogenide monolayers

TL;DR: In this paper, the exciton dynamics in transition metal dichalcogenide monolayers were investigated using time-resolved photoluminescence experiments performed with optimized time resolution.
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Spin Relaxation Quenching in Semiconductor Quantum Dots

TL;DR: The spin dynamics in self-organized InAs/GaAs quantum dots by time-resolved photoluminescence performed under strictly resonant excitation demonstrates that the carrier spins are totally frozen on the exciton lifetime scale.
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Charged excitons in monolayer WSe 2 : Experiment and theory

TL;DR: In this paper, the binding energy of monolayer transition-metal dichalcogenides has been investigated in charge-tunable devices based on hexagonal boron nitride to investigate the difference in binding energy between the trion transition and the fine structure.
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Direct observation of the electron spin relaxation induced by nuclei in quantum dots.

TL;DR: This efficient electron spin relaxation mechanism in semiconductor InAs/GaAs quantum dots can be suppressed by an external magnetic field as small as 100 mT.