A LiDAR-based 3-D point cloud measuring system includes a base, a housing, a plurality of photon transmitters and photon detectors contained within the housing, a rotary motor that rotates the housing about the base, and a communication component that allows transmission of signals generated by the photon detectors to external components. In several versions of the invention, the system includes a vertically oriented motherboard, thin circuit boards such as ceramic hybrids for selectively mounting emitters and detectors, a conjoined D-shaped lens array, and preferred firing sequences.

High definition lidar system

A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (40) on the seed layer (20;20').

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

Method for producing semiconductor device

The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Organic Light Emitting Display Device

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

A low temperature process for dehydrogenating amorphous silicon using lasers Dehydrogenation occurs by irradiating one or more areas of a hydrogenated amorphous silicon layer with laser beam pulses at a relatively low energy density After the multiple laser pulse irradiation at a relatively low energy density, the laser energy density is increased and multiple irradiation at a higher energy density is performed If after the multiple irradiation at the higher energy density the amorphous silicon hydrogen content is still too high, dehydrogenation proceeds by multiple irradiations at a yet higher energy density The irradiation at the various energy densities can result in the formation of polysilicon due to melting of the amorphous silicon layer As irradiation may be selectively applied to the amorphous silicon, an integral amorphous silicon-polysilicon structure may be formed

Low temperature process for laser dehydrogenation and crystallization of amorphous silicon

The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the substrate. A polycrystalline silicon layer is formed by crystallizing the silicon layer using a laser beam.

Buffered substrate for semiconductor devices

The x-ray imaging performance is reported using polycrystalline lead iodide as a thick semiconductor detector on an active matrix flat panel array. We have developed a test image sensor with 100 micron pixel size in a 512 X 512 format, using amorphous silicon TFTs for matrix addressing. The new 14 bit electronic system allows radiographic and fluoroscopic x-ray imaging. PbI2 has larger x-ray absorption and higher charge generation efficiency than selenium, and has the potential for higher sensitivity imaging. The films are deposited by vacuum sublimation and have been grown thicker than 100 micrometer. Measurements of the carrier transport and charge collection, together with modeling studies show how the x-ray sensitivity depends on the material properties. Imaging measurements find excellent spatial resolution and confirm models of the x-ray sensitivity. Both radiographic and fluoroscopic imaging are demonstrated. While good overall imaging is obtained, the dark leakage current and image lag need further improvement.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

X-ray imaging using lead iodide as a semiconductor detector

A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.

Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage

A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.

Ping Mei

Papers

Low temperature process for laser dehydrogenation and crystallization of amorphous silicon

Buffered substrate for semiconductor devices

X-ray imaging using lead iodide as a semiconductor detector

Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage

Continuous amorphous silicon layer sensors using doped poly-silicon back contact