Showing papers by "Pramod Kumar Tiwari published in 2015"
TL;DR: The findings of the present study are contradictory to the general opinion with regard to the association of risk factors like obesity, age, and urban living with GBC.
Abstract: Background: We have reported here the 5-year incidence (2004–2008) of gallbladder cancer (GBC) in North Central India along with its descriptive epidemiology. This provides potential clues for better prevention. The present study has also evaluated the association of ABO blood groups with GBC. Patients And Methods: The study comprised 742 GBC cases referred to the regional cancer hospital, Gwalior, during 2004–2008. The demographic statistics of Gwalior district was considered to calculate the relative risk and incidence rates. ABO blood group distribution amongst 90,000 healthy subjects registered in the local blood bank during 2002–2007 was taken as controls to study the association of blood groups with GBC. Results: The age-standardized total incidence rate of GBC was calculated to be 7.16/1,00,000. The relative risk of females getting GBC was 2.693 at 95% confidence interval of 2.304–3.151 (P < 0.0001). The females formed 69.5% of total cancer cases, with age-standardized incidence rate of 10/1,00,000. The mean age of male and female GBC cases was found to be 55.4 years (SD = 13, SE = 0.77) and 51.5 years (SD = 12.3, SE = 0.50), respectively. The blood groups A (P = 0.0022) and AB (P < 0.0001) had a positive association with GBC with significant level of differences in comparison to controls. Conclusion: Our study provided an estimate of a 5-year incidence of GBC in North Central India for the first time. With regard to the association of risk factors like obesity, age, and urban living with GBC, the findings of the present study are contradictory to the general opinion. Blood groups A and AB were found to be associated with GBC, which would be provisional for further investigations.
21 citations
TL;DR: In this article, the effect of different channel length ratios, channel length, oxide thickness and channel thickness of device on the sub-threshold current and subthreshold swing of DMQG MOSFETs have been discussed and it is shown that these approximated 3D-model results are in well agreement with the ATLAS simulation results.
Abstract: Quasi-3D models of subthreshold current and subthreshold swing for Dual-Metal Quadruple-Gate (DMQG) MOSFETs are presented in this paper. Equivalent number of gates (ENGs) concept has been utilized to calculate the effective natural length $$\lambda _{DMQG}$$?DMQG of DMQG MOSFETs in spite of solving three-dimensional (3D) Poisson's equation. Further, the effective natural length $$\lambda _{DMQG}$$?DMQG has been used to calculate center channel potential which in turn used to formulate the `virtual cathode' potential equation of the device. Eventually, the subthreshold current modeling is done using Pao-Sah's current equation along with the `virtual cathode' potential equation. Besides, the subthreshold swing model is also derived using `virtual cathode' concept and Boltzmann equation. The effect of different channel length ratios, channel length, oxide thickness and channel thickness of device on the subthreshold current and subthreshold swing of DMQG MOSFETs have been discussed and it is shown that these approximated 3D-model results are in well agreement with the ATLAS simulation results.
10 citations
TL;DR: In this paper, a surface potential based threshold voltage model of fully-depleted (FD) recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metaloxide semiconductor field effect transistor (MOSFET) is presented while considering the effects of high-k gate-dielectric material induced fringing field.
Abstract: In this paper, a surface potential based threshold voltage model of fully-depleted (FD) recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional (2D) Poisson's equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model's results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters, including the dielectric constant of gate-dielectric material.
1 citations
01 Feb 2015
TL;DR: In this paper, a Re-S/D SOI MOSFET with 30nm channel length and 10nm channel thickness is virtually fabricated with reduced short channel effects (SCEs) and low source/drain series resistance.
Abstract: This paper describes process and device simulation results of short-channel Recessed-Source/Drain (Re-S/D) SOI MOSFETs. A Re-S/D SOI MOSFET with 30nm channel length, and 10nm channel thickness, is virtually fabricated with reduced short channel effects (SCEs) and low source/drain series resistance. The processing steps, which are required to obtain the structure of the Re-S/D SOI MOSFET, are proposed and explained in detail. The electrical characteristic Ids versus drain to source voltage VDS is obtained for different values of VGS and Re-S/D thickness (trsd). The device is virtually fabricated using 2D process simulator ATHENA, followed by electrical characterization which is done with the help of device simulator ATLAS TM from SILVACO.