S
Sarvesh Dubey
Researcher at B. R. Ambedkar Bihar University
Publications - 87
Citations - 856
Sarvesh Dubey is an academic researcher from B. R. Ambedkar Bihar University. The author has contributed to research in topics: Subthreshold conduction & Threshold voltage. The author has an hindex of 13, co-authored 69 publications receiving 615 citations. Previous affiliations of Sarvesh Dubey include Indian Institute of Technology Delhi & Indian Institutes of Technology.
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DYNAMICO-1.0, an icosahedral hydrostatic dynamical core designed for consistency and versatility
TL;DR: In this article, the icosahedral dynamical core DYNAMICO is presented, which solves the multi-layer rotating shallow-water equations, a compressible variant of the same equivalent to a discretization of the hydrostatic primitive equations in a Lagrangian vertical coordinate, and the primitive equation in a hybrid mass-based vertical coordinate.
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A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors
TL;DR: In this article, a 2D analytical model for the threshold voltage of fully depleted short-channel triple-material double-gate (DG) MOSFETs is presented, which is solved with suitable boundary conditions by applying the parabolic potential approximation.
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A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile
TL;DR: In this paper, a two-dimensional model for the threshold voltage of the short-channel double-gate MOSFETs with a vertical Gaussian-like doping profile is proposed.
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A standard test case suite for two-dimensional linear transport on the sphere: results from a collection of state-of-the-art schemes
Peter H. Lauritzen,Paul A. Ullrich,Christiane Jablonowski,Peter A. Bosler,Donna Calhoun,Andrew Conley,Takeshi Enomoto,Lian-Hui Dong,Sarvesh Dubey,Oksana Guba,A. B. Hansen,Eigil Kaas,James Kent,Jean-Francois Lamarque,Michael J. Prather,Daniel Reinert,Vladimir V. Shashkin,William C. Skamarock,B. Sørensen,Mark A. Taylor,Mikhail A. Tolstykh +20 more
TL;DR: Results from 19 state-of-the-art transport scheme formulations based on finite-difference/finite-volume methods as well as emerging (in the context of atmospheric/oceanographic sciences) Galerkin methods are presented.
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An Analytical Threshold Voltage Model for Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs
TL;DR: In this paper, an analytical threshold voltage model is proposed for a triple-material cylindrical gate-all-around MOSFET considering parabolic approximation of the potential along the radial axis.