V
Visweswara Rao Samoju
Researcher at Gayatri Vidya Parishad College of Engineering
Publications - 12
Citations - 68
Visweswara Rao Samoju is an academic researcher from Gayatri Vidya Parishad College of Engineering. The author has contributed to research in topics: Threshold voltage & MOSFET. The author has an hindex of 4, co-authored 12 publications receiving 46 citations. Previous affiliations of Visweswara Rao Samoju include National Institute of Technology, Rourkela.
Papers
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Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)
TL;DR: In this article, an analytical model of the threshold voltage for short-channel symmetrical silicon nano-tube field effect transistors (Si-NT FETs) is presented, where the inversion charge density is calculated in the channel region of the device in the subthreshold regime of device operation, using the Boltzmann relationship.
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Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs
TL;DR: In this article, the effect of different channel length ratios, channel length, oxide thickness and channel thickness of device on the sub-threshold current and subthreshold swing of DMQG MOSFETs have been discussed and it is shown that these approximated 3D-model results are in well agreement with the ATLAS simulation results.
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Investigation of Temperature and Source/Drain Overlap Impact on Negative Capacitance Silicon Nanotube FET (NC Si NTFET) with Sub-60mV/decade Switching
TL;DR: The impact of temperature and source/drain overlap on DC characteristics and analog/RF performance of the negative capacitance silicon nanotube FET (NC Si NTFET) have been presented.
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A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs
TL;DR: In this paper, a threshold voltage model for dual-metal quadruple-gate (DMQG) metal-oxide-semiconductor field effect transistors (MOSFETs) is presented by using the virtual-cathode potential formulated from the quasi-3D scaling equation adopting the equivalent number of gates concept.
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Analytical modeling of subthreshold characteristics by considering quantum confinement effects in ultrathin dual-metal quadruple gate (DMQG) MOSFETs
TL;DR: In this paper, the 2D Schrodinger's equation has been solved analytically to obtain the threshold voltage and sub-threshold current of an ultrathin dual-metal quadruple gate MOSFET with minimum cross-section of 3 nm × 3 nm.