Q
Qingjiang Li
Researcher at National University of Defense Technology
Publications - 82
Citations - 799
Qingjiang Li is an academic researcher from National University of Defense Technology. The author has contributed to research in topics: Memristor & Computer science. The author has an hindex of 12, co-authored 63 publications receiving 555 citations. Previous affiliations of Qingjiang Li include University of Southampton & University of Defence.
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Journal ArticleDOI
Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory
Sen Liu,Nianduan Lu,Nianduan Lu,Xiaolong Zhao,Xiaolong Zhao,Hui Xu,Writam Banerjee,Writam Banerjee,Hangbing Lv,Hangbing Lv,Shibing Long,Shibing Long,Qingjiang Li,Qi Liu,Qi Liu,Ming Liu,Ming Liu +16 more
TL;DR: Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament into the Pt electrode, and the CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer.
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Short-Term and Long-Term Plasticity Mimicked in Low-Voltage Ag/GeSe/TiN Electronic Synapse
TL;DR: Various synaptic functions, including short-term Plasticity, long-term plasticity, pair-pulse facilitation, and spike timing-dependent Plasticity have been successfully eliminated in Ag/GeSe/TiN devices.
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A Memristor SPICE Model Accounting for Synaptic Activity Dependence
TL;DR: This work proposes a new memristor SPICE model that accounts for the typical synaptic characteristics that have been previously demonstrated with practical memristive devices and shows that this model could account for both volatile and non-volatile memristance changes under distinct stimuli.
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A Ti/AlO x /TaO x /Pt Analog Synapse for Memristive Neural Network
TL;DR: In this paper, a Ti/AlO x/TaO x /Pt memristor was proposed as an analog synapse for memristive neural network applications, which shows high uniformity, excellent analog switching behaviors (up to 200 resistance states under triangle pulses) and excellent long-term retention of each state.
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Pulse-induced resistive and capacitive switching in TiO2 thin film devices
TL;DR: In this article, the effective resistive and capacitance of nanoscale Pt/TiO2/Pt devices can be modulated by appropriate voltage pulsing under an external bias, this behaviour being governed by the formation/disruption of conductive filaments through the TiO2 thin film.