N
Nianduan Lu
Researcher at Chinese Academy of Sciences
Publications - 171
Citations - 2248
Nianduan Lu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Nanocrystalline material & Resistive random-access memory. The author has an hindex of 24, co-authored 158 publications receiving 1741 citations. Previous affiliations of Nianduan Lu include Beijing University of Technology & Tsinghua University.
Papers
More filters
Journal ArticleDOI
Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory
Sen Liu,Nianduan Lu,Nianduan Lu,Xiaolong Zhao,Xiaolong Zhao,Hui Xu,Writam Banerjee,Writam Banerjee,Hangbing Lv,Hangbing Lv,Shibing Long,Shibing Long,Qingjiang Li,Qi Liu,Qi Liu,Ming Liu,Ming Liu +16 more
TL;DR: Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament into the Pt electrode, and the CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer.
Journal ArticleDOI
Thermal crosstalk in 3-dimensional RRAM crossbar array
Pengxiao Sun,Pengxiao Sun,Nianduan Lu,Ling Li,Yingtao Li,Hong Wang,Hangbing Lv,Qi Liu,Shibing Long,Su Liu,Ming Liu +10 more
TL;DR: It is revealed that the reset process is dominated by transient thermal effect in 3D RRAM array, and possible methods for alleviating thermal crosstalk effect while further advancing the scaling potential are provided and verified by numerical simulation.
Journal ArticleDOI
A review of carrier thermoelectric-transport theory in organic semiconductors
TL;DR: A theoretical description of the thermoelectric Seebeck effect in organic semiconductors is provided and an outlook of the remaining challenges ahead for future theoretical research is provided.
Journal ArticleDOI
Thermoelectric Seebeck effect in oxide-based resistive switching memory
Ming Wang,Chong Bi,Ling Li,Shibing Long,Qi Liu,Hangbing Lv,Nianduan Lu,Pengxiao Sun,Ming Liu +8 more
TL;DR: It is shown that the small-polaron hopping model can well describe the electronic transport process for all resistance states, although the corresponding temperature-dependent resistance behaviours are contrary.
Journal ArticleDOI
Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions
Quantan Wu,Quantan Wu,Jiawei Wang,Jiawei Wang,Jingchen Cao,Jingchen Cao,Congyan Lu,Congyan Lu,Guanhua Yang,Guanhua Yang,Xuewen Shi,Xuewen Shi,Xichen Chuai,Xichen Chuai,Yuxin Gong,Yuxin Gong,Yue Su,Yue Su,Ying Zhao,Ying Zhao,Nianduan Lu,Nianduan Lu,Geng Di,Geng Di,Hong Wang,Ling Li,Ling Li,Ming Liu,Ming Liu +28 more
TL;DR: Artificial synapses based on indium–gallium–zinc oxide (IGZO) TFT are fabricated and the photoelectric plasticity is investigated, representing a major advance toward implementation of full synaptic functionality in neuromorphic hardware.