Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material

Atomically thin MoS2: a new direct-gap semiconductor

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

http://science.sciencemag.org/content/sci/294/5546/1488.full.pdf

Spintronics: a spin-based electronics vision for the future.

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS2 provides new opportunities for engineering the electronic structure of matter at the nanoscale.

Emerging Photoluminescence in Monolayer MoS2

The band structure of Mn-based Heusler alloys of the $C{1}_{b}$ crystal structure (MgAgAs type) has been calculated with the augmented-spherical-wave method. Some of these magnetic compounds show unusual electronic properties. The majority-spin electrons are metallic, whereas the minority-spin electrons are semiconducting.

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New Class of Materials: Half-Metallic Ferromagnets

A review of new developments in theoretical and experimental electronic-structure investigations of half-metallic ferromagnets (HMFs) is presented. Being semiconductors for one spin projection and metals for another, these substances are promising magnetic materials for applications in spintronics (i.e., spin-dependent electronics). Classification of HMFs by the peculiarities of their electronic structure and chemical bonding is discussed. The effects of electron-magnon interaction in HMFs and their manifestations in magnetic, spectral, thermodynamic, and transport properties are considered. Special attention is paid to the appearance of nonquasiparticle states in the energy gap, which provide an instructive example of essentially many-body features in the electronic structure. State-of-the-art electronic calculations for correlated d-systems are discussed, and results for specific HMFs (Heusler alloys, zinc-blende structure compounds, CrO2, and Fe3O4) are reviewed.

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Half-metallic ferromagnets: From band structure to many-body effects

The band structures of the semiconducting layered compounds ${\mathrm{MoSe}}_{2}$, ${\mathrm{MoS}}_{2}$, and ${\mathrm{WSe}}_{2}$ have been calculated self-consistently with the augmented-spherical-wave method. Angle-resolved photoelec- tron spectroscopy of ${\mathrm{MoSe}}_{2}$ using He i, He ii, and Ne i radiation, and photon-energy-dependent normal-emission photoelectron spectroscopy using synchrotron radiation, show that the calculational results give a good description of the valence-band structure. At about 1 eV below the top of the valence band a dispersionless state was measured, almost completely of Mo 4d character. Such a state, which is not predicted by band-structure calculations, has also been observed in metallic layered compounds. Suggestions are given for the explanation of this phenomenon.

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Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy

From band-structure calculations it is shown that ${\mathrm{MoSe}}_{2}$, ${\mathrm{MoS}}_{2}$, and ${\mathrm{WSe}}_{2}$ are indirect-gap semiconductors. The top of the valence band is at the \ensuremath{\Gamma} point and the bottom of the conduction band is along the line T of the hexagonal Brillouin zone, halfway between the points \ensuremath{\Gamma} and K. The A and B excitons correspond to the smallest direct gap at the K point. This assignment of the exciton peaks is shown to be consistent with the polarization dependence of their intensities, their effective masses, and the observed dependence of their splitting on the spin-orbit splittings of the constituent elements. The wave function at the top of the valence band is shown to be a metal-nonmetal antibonding state, which explains the observed high stability of these materials in photoelectrochemical cells against photocorrosion.

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Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps

Angular momentum seems to not be conserved in chemical reactions where one of the reactants is magnetic; consequently, such reactions show a high activation barrier. An example is the production of hydrogen by electrolysis of water: practically all losses occur in the production of (magnetic) oxygen. Anodes with a low overvoltage (a measure of the losses) are based on the ruthenium dioxide (110) surface. First-principles electronic structure calculations show that this surface itself carries magnetic moments. This magnetic surface enables the production of oxygen in the ground state while conserving angular momentum.

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R.A. de Groot

Papers

New Class of Materials: Half-Metallic Ferromagnets

Half-metallic ferromagnets: From band structure to many-body effects

Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy

Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps

Role of Magnetism in Catalysis: RuO2 (110) Surface