A near field transducer includes gold and at least one dopant. The dopant can include at least one of: Cu, Rh, Ru, Ag, Ta, Cr, Al, Zr, V, Pd, Ir, Co, W, Ti, Mg, Fe, or Mo. The dopant concentration may be in a range from 0.5% and 30%. The dopant can be a nanoparticle oxide of V, Zr, Mg, Ca, Al, Ti, Si, Ce, Y, Ta, W, or Th, or a nitride of Ta, Al, Ti, Si, In, Fe, Zr, Cu, W or B.

Hamr nft materials with improved thermal stability

An apparatus that includes a near field transducer, the near field transducer including an electrically conductive nitride.

Near field transducers including nitride materials

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

Materials for near field transducers and near field transducers containing same

Devices that include a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer includes tantalum oxide (TaO), titanium oxide (TiO), chromium oxide (CrO), silicon oxide (SiO), aluminum oxide (AlO), titanium oxide (TiO), zirconium oxide (ZrO), yttrium oxide (YO), magnesium oxide (MgO), beryllium oxide (BeO), niobium oxide (NbO), hafnium oxide (HfO), vanadium oxide (VO), strontium oxide (SrO), or combinations thereof; silicon nitride (SiN), aluminum nitride (Al), boron nitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), niobioum nitride (NbN), hafnium nitride (HfN), chromium nitride (CrN), or combinations thereof silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), niobioum carbide (NbC), chromium carbide (CrC), vanadium carbide (VC), boron carbide (BC), or combinations thereof or combinations thereof.

Devices including a gas barrier layer

Devices that include a near field transducer (NFT), the NFT including a peg having five surfaces, the peg including a first material, the first material including gold (Au), silver (Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), or combinations thereof; an overlying structure; and at least one intermixing layer, positioned between the peg and the overlying structure, the at least one intermixing layer positioned on at least one of the five surfaces of the peg, the intermixing layer including at least the first material and a second material.

Devices including at least one intermixing layer

Ultra shallow junctions <500 /spl Aring/ with steep profiles <8 nm/decade are required for device technologies /spl les/0.13 /spl mu/m as outlined by the recent ITRS Roadmap. For a p/sup +//n junction such profiles can be obtained using sub-keV B ion implantation since both the projected range and more importantly the transient enhanced diffusion are significantly reduced at lower energies. State-of-the-art high current implanters utilize a deceleration mode typically for sub 1 keV implantation in order to increase the beam current and production wafer throughput. Such a mode contains a very low level of energy contamination. This level is measured for sub keV B implants in the Quantum Leap and factors affecting the level of contamination are studied. Spike and soak annealing reduces the effect of the energy contamination on junction profile and depth. The effect of energy contamination on device performance such as L/sub eff/, VT and I/sub DSAT/ is simulated using ISE TCAD.

/pdf/junction-profiles-of-sub-kev-ion-implantation-for-deep-sub-29i4uoa7ag.pdf

Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

For advanced technologies there is a lack of experimental data and calibrated physical models that enable accurate simulation of CMOS technologies down to channel lengths of 100 nm and below. This work aims to develop predictive modeling of ultra shallow junctions (USJ) profiles for state-of-the-art and next generation CMOS devices. Profiles were created by As (0.2–10 keV), B (0.2–10 keV) and BF 2 (1–25 keV) ion implantation and annealed at various times and temperatures including typical drain extension spike anneals. B and BF 2 profiles are investigated with and without pre-amorphization by implantation of Si or Ge. The calibration is based on SIMS and SRP profiles as well as XTEM pictures. The BC code Crystal-TRIM was calibrated for ultra low energy implantation. Annealing is simulated within the pair diffusion framework of the process simulator DIOS, including first order reaction equations for interstitial and dopant clustering and a new model for dose loss, where impurities are stored in a thin surface layer on top of the silicon.

TCAD calibration of USJ profiles for advanced deep sub-μm CMOS processes

/pdf/conference-on-ion-implantation-technology-2000-1i0kx1k59e.pdf

R. Mickevicius

Papers

Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

TCAD calibration of USJ profiles for advanced deep sub-μm CMOS processes

Conference on Ion Implantation Technology, 2000