R
R. P. M. van Hal
Researcher at Philips
Publications - 4
Citations - 108
R. P. M. van Hal is an academic researcher from Philips. The author has contributed to research in topics: Crystallization & Amorphous silicon. The author has an hindex of 4, co-authored 4 publications receiving 105 citations.
Papers
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Time‐resolved reflectivity measurements during explosive crystallization of amorphous silicon
TL;DR: In this article, the authors used time-resolved reflectivity measurements and Rutherford backscattering spectrometry to study the explosive crystallization of amorphous silicon during irradiation by a 32-ns FWHM ruby laser pulse.
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Between explosive crystallization and amorphous regrowth: Inhomogeneous solidification upon pulsed‐laser annealing of amorphous silicon
TL;DR: In this paper, a laterally random pattern of polycrystalline Si patches was found imbedded in amorphous material, and a considerable fraction of the regrown Si was polycrystaline.
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Direct observation of resolidification from the surface upon pulsed-laser melting of amorphous silicon
TL;DR: Amorphized Si has been irradiated using a 7.5 ns frequency-doubled neodymium:yttrium aluminum garnet laser as mentioned in this paper, and the melted layer solidifies from the surface as well as from the liquid-solid interface.
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The Transition Between Amorphous Regrowth and Explosive Crystallization
TL;DR: In this paper, the transition between amorphous regrowth and explosive crystallization of a 220nm thick polycrystalline Si layer on a crystalline Si substrate has been studied using time-resolved reflectivity, transmission electron microscopy, and Rutherford backscattering spectroscopy.