This paper demonstrates an 8-element phased array receiver in a standard 0.18-mum SiGe BiCMOS (1P6M, SiGe HBT ft ap 150 GHz) technology for X- and Ku-band applications. The array receiver adopts the All-RF architecture, where the phase shifting and power combining are done at the RF level. With the integrations of all the digital control circuitry and ESD protection for all I/O pads, the receiver consumes a current of 100 ~ 200 m A from a 3.3 V supply voltage. The receiver shows 1.5 ~ 24.5 dB of power gain per channel from a 50 Omega load at 12 GHz with bias current control, and an associated NF of 4.2 dB (@ max. gain) to 13.2 dB (@ min. gain). The RMS gain error is < 0.9 dB and the RMS phase error is < 6deg at 6-18 GHz for all 4-bit phase states. The measured group delay is 162.5 plusmn 12.5 ps for all phase states at 6-18 GHz. The RMS phase mismatch and RMS gain mismatch among the eight channels are < 2.7deg and 0.4 dB, respectively, for all 16 phase states, over 6-18 GHz. The 8-element array can operate instantaneously at any center frequency and with a wide bandwidth (3 to 6 GHz, depending on the center frequency) given primarily by the 3 dB gain variation in the 6-18 GHz range. To our knowledge, this is the first demonstration of an All-RF phased array on a silicon chip with very low RMS phase and gain errors at 6-18 GHz. The chip size is 2.2 times 2.45 mm2 including all pads.

An X- and K u -Band 8-Element Phased-Array Receiver in 0.18- $\mu{\hbox{m}}$ SiGe BiCMOS Technology

This paper presents the design and measurement of a 12-GHz active phase shifter with an integrated low-noise amplifier in SiGe. The phase is controlled with a 1-bit (180/spl deg/) digital phase shifter and a 180/spl deg/ continuous analog phase shifter. The 1-bit digital phase shifter is implemented by switching between a -90/spl deg/ low-pass network and a +90/spl deg/ high-pass network. The analog phase shifter is implemented using a lumped-element loaded line technique where both series and shunt elements are adjusted to continuously vary the phase while maintaining a constant port impedance. Design equations for this constant-impedance phase-shift network are derived and presented. The phase shifter achieves 3.7/spl plusmn/0.5 dB of gain, with a noise figure of 4.4 dB at a center frequency of 11.5 GHz. The total chip size including pads is 1920 /spl mu/m /spl times/ 780 /spl mu/m, and the area of the active circuitry without pads is 1680 /spl mu/m /spl times/ 660 /spl mu/m (1.1 mm/sup 2/).

A 12-GHz SiGe phase shifter with integrated LNA

Antenna arrays have been demonstrated as a very promising technique for high-speed wireless networks, and are anticipated to be indispensable components in future wireless communication systems. This review paper presents an overview of the circuit techniques on combining signals from different receive array elements as well as splitting signals to different transmit array elements with emphasis on silicon-based solutions. It also reviews circuit techniques to control the phase and the amplitude of signals from/to each array element such that signals from those array elements can be combined and split in a desired manner for achieving high data rate communications as well as interference management.

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Supporting and Enabling Circuits for Antenna Arrays in Wireless Communications

A comprehensive analysis of error sources in monolithic microwave phase shifters due to device size limitations, inductor parasitics, loading effects, and nonideal switches is presented. Each component utilized in the implementation of a monolithic high-pass/low-pass phase shifter is analyzed, and its influence on phase behavior is shown in detail, with an emphasis on the net impact on absolute phase variation. The design of the individual phase-shifter filter sections and the influence of bit ordering on overall performance are also addressed. An X-band 5-bit phase shifter fabricated in a 200-GHz SiGe HBT BiCMOS technology platform is used to validate this analysis and our design methodology and achieves an absolute rms phase error of 4deg and relative rms phase error of 3deg for operation from 8.5 to 10.5 GHz

Sources of Phase Error and Design Considerations for Silicon-Based Monolithic High-Pass/Low-Pass Microwave Phase Shifters

An X-Band phased-array RF integrated circuit with built-in self-test (BIST) capabilities is presented. The BIST is accomplished using a miniature capacitive coupler at the input of each channel and an on-chip I/Q vector receiver. Systematic effects introduced with BIST system are covered in detail and are calibrated out of measurements. The BIST can be done at a rate of 1 MHz with 55 dB signal-to-noise-ratio and allows for the measurement of an on-chip array factor. Measurements done with BIST system agree well with S-parameter data over all test conditions. To our knowledge, this is the first implementation of an on-chip BIST with high accuracy.

A Phased Array RFIC With Built-In Self-Test Capabilities

This paper reports the performances of several broad-band monolithic SiGe monolithic microwave integrated circuits (MMICs) suitable for phased-array radar applications. The amplitude and phase control MMIC designs are based on an optimized SiGe p-i-n diode offered by the IBM 5HP SiGe foundry process. Utilizing this diode, several control circuitries including a broad-band (1-20-GHz) monolithic single-pole double-throw switch, a five-port transfer switch, a 6-bit phase shifter, and a 5-bit attenuator, all operating over 7-11 GHz, are designed. Also, the design and performance of an SiGe heterojunction bipolar transistor variable-gain cascode amplifier that combines the functionality of an amplifier and an attenuator into one MMIC is described.

Broad-band SiGe MMICs for phased-array radar applications

This paper reports the performances of several broadband monolithic SiGe MMICs suitable for phased array radar applications. The amplitude and phase control MMIC designs are based on an optimized SiGe PIN diode offered by IBM 5-HP SiGe foundry process. Utilizing this diode, several control circuitries including a broadband (1-20 GHz) monolithic SPDT switch, a five port transfer switch, a 6-bit phase shifter, and a 5-bit attenuator, all operating over 7-11 GHz are designed. Also, the design and performance of a SiGe HBT variable gain cascode amplifier that combines the functionality of an amplifier and an attenuator into one MMIC is described

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R. Tayrani

Papers

Broad-band SiGe MMICs for phased-array radar applications

SiGe MMICs for phased array radar applications