There is a special reason for reviewing this book at this time: it is the 50th edition of a compendium that is known and used frequently in most chemical and physical laboratories in many parts of the world. Surely, a publication that has been published for 56 years, withstanding the vagaries of science in this century, must have had something to offer. There is another reason: while the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice). I believe that the Handbook can be useful in those laboratories. One of the reasons, among others, is that the various basic items of information it offers may be helpful in new tests, either physical or chemical, which are continuously being published. The basic information may relate

Handbook of Chemistry and Physics

日本物理学会誌及びJournal of the Physical Society of Japanの月刊について

Note: Times Cited: 875 Reference EPFL-ARTICLE-206025doi:10.1021/cr0501846View record in Web of Science URL: ://WOS:000249839900009 Record created on 2015-03-03, modified on 2017-05-12

Complex Hydrides for Hydrogen Storage

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

A review of Ga2O3 materials, processing, and devices

Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin‐dependent electron scattering due to spin canting of the manganese oxide.

31p-S-4 Giant Magnetoresistance in Magnetic Manganese Oxide with Intrinsic Antiferromagnetic Spin Structure

Electronic band structure and optical characteristic of silver lanthanide XAgSe2 (X = Eu and Er) dichalcogenides: Insight from DFT computations

In the present work, we determined the structural, electronic and optical properties of HgSiX2 (X = P, As) chalcopyrite materials by using the density functional theory (DFT). Our calculated results showed alignment with the data drawn from other experimental and theoretical studies. Therefore including the lattice parameters, bulk moduli, band gaps, the total and partial densities of states and the optical properties. The computed band structures and density of states (DOS) disclosed that HgSiP2 and HgSiAs2 are semiconductors materials with energy gaps equal to 0.931 eV and 0.425 eV, respectively. Our findings displace that the Si-3p, P-3p and As-4p atomic orbitals contribute to the density of states. Moreover, a comprehensive analysis of the electronic and the optical properties such as the reflectivity, absorption spectra, and dielectric functions revealed that the HgSiP2 and the HgSiAs2 materials may be beneficial in optoelectronic applications. We hope that the designs and preparations of the HgSiP2 and the HgSiAs2 materials will lead to give new advance strategies and gateways for the explorations of highly efficient optoelectronic devices.

Structural, Electronic and Optical Characteristics of HgSiX 2 (X=P, As) Chalcopyrite Materials: A DFT-Based Computer Simulation

On the pressure and temperature dependent ductile, brittle nature of SmS 1-x Se x semiconductor

A first-principles method has been employed to determine the electronic, magnetic and structural characteristics of the full-Heusler alloys Fe2VAl with Sn doping. All the calculations were performed by using a computational code based on full-potential linearized augmented plane wave method called WIEN2k. The electron exchange–correlation is treated by the generalized gradient approximation within a scheme developed by Perdew, Burke and Ernzerhof (PBE-GGA). The electronic band structures of Fe2VAl1−xSnx (x = 0, 0.25, 0.50, 0.75) compounds show that the majority-spin (spin-up) exhibits a metallic characteristic, whereas the minority-spin (spin-dn) have an energy band gap. Our calculations predict that Fe2VAl1−xSnx compounds are half-metallic ferromagnets with an integer value of magnetic moment, 0, 1, 2, and 3 μB, respectively. Our findings suggest that these materials are potential candidates for manufacturing spintronic devices.

Rabah Khenata

Papers

Electronic band structure and optical characteristic of silver lanthanide XAgSe2 (X = Eu and Er) dichalcogenides: Insight from DFT computations

Structural, Electronic and Optical Characteristics of HgSiX 2 (X=P, As) Chalcopyrite Materials: A DFT-Based Computer Simulation

On the pressure and temperature dependent ductile, brittle nature of SmS 1-x Se x semiconductor

The effect of Sn substitution on the Al sites in full Heusler compound Fe 2 VAl

Structural phase transition and opto-electronic properties of NaZnAs