Journal•ISSN: 0374-4884
Journal of the Korean Physical Society
Korean Physical Society
About: Journal of the Korean Physical Society is an academic journal published by Korean Physical Society. The journal publishes majorly in the area(s): Thin film & Dielectric. It has an ISSN identifier of 0374-4884. Over the lifetime, 12654 publications have been published receiving 60548 citations. The journal is also known as: Korean Physical Society. Journal.
Topics: Thin film, Dielectric, Photoluminescence, Laser, Beam (structure)
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TL;DR: In this paper, the terahertz absorption spectra, the refractive indices and the dielectric functions of various polymer materials were measured and compared, and the loss mechanism was discussed by correlating the absorption coefficients and loss tangents (tan {delta}) of the materials.
Abstract: The terahertz dielectric properties of polymers were characterized by transmission terahertz time domain spectroscopy (THz-TDS) in the frequency range extending from 0.2 to 3.0 THz. The terahertz absorption spectra, the refractive indices and the dielectric functions of various polymer materials were measured and compared. The variation of the refractive index of the polymers was less than 6 %, ranging from 1.4 to 1.8, within the investigated frequency range, but the absorption properties of the polymers showed very different frequency-dependent behaviors. The loss mechanism for terahertz radiation in polymers is discussed by correlating the absorption coefficients and the loss tangents (tan {delta}) of the materials.
433 citations
Journal Article•
206 citations
205 citations
172 citations
TL;DR: In this paper, the authors investigated the layer-number-dependent work function of MoS2 nanoflakes by using Kelvin probe force microscopy (KPFM) to measure the surface potential.
Abstract: We investigated the layer-number-dependent work function of MoS2 nanoflakes by using Kelvin probe force microscopy (KPFM) to measure the surface potential. The work functions of as-prepared 1- to 6-layer MoS2 nanoflakes were 5.15–5.39 eV and increased with increasing layer number. After annealing, the work functions of the nanoflakes decreased to 0.1–0.2 eV due to elimination of absorbed molecules on the surface. However, the work function of the edge region of the annealed flakes was relatively larger than that of the internal region. The charge carrier trapping by adsorbed molecules due to the polarity and the hydrophilicity of MoS2 may cause a reduction in the work function of the annealed flakes compared with that for MoS2 exposed to air. The dependence of the obtained work function of MoS2 nanoflakes on the number of layers is essential to the formation of metal contacts for fabricating future MoS2-based devices.
171 citations