A vehicle interior monitoring system to identify, locate and monitor occupants, including their parts, and other objects in the passenger compartment and objects outside of a motor vehicle, such as an automobile or truck, by illuminating the contents of the vehicle and objects outside of the vehicle with electromagnetic, and specifically infrared, radiation and using one or more lenses to focus images of the contents onto one or more arrays of charge coupled devices (CCD arrays) Outputs from the CCD arrays, are analyzed by appropriate computational means employing trained pattern recognition technologies, to classify, identify or locate the contents or external objects In general, the information obtained by the identification and monitoring system is used to affect the operation of some other system in the vehicle When system is installed in the passenger compartment of an automotive vehicle equipped with an airbag, the system determines the position of the vehicle occupant relative to the airbag and disables deployment of the airbag if the occupant is positioned so that he/she is likely to be injured by the deployment of the airbag

Optical identification and monitoring system using pattern recognition for use with vehicles

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

Thin-film transistor

System and method for controlling operation of a vehicle or a component thereof based on recognition of a individual including a processor embodying a pattern recognition algorithm trained to identify whether a person is the individual by analyzing data derived from optical images and an optical receiving unit for receiving images including the person and deriving data from the images. The optical receiving unit provides the data to the algorithm to obtain an indication from the algorithm whether the person is the individual. A security system enables operation of the vehicle when the algorithm provides an indication that the person is an individual authorized to operate the vehicle and prevents operation of the vehicle when the algorithm does not provide an indication that the person is an individual authorized to operate the vehicle. A component adjustment system adjusts the component based on the recognition of the individual.

Vehicular component control systems and methods

The anomalous leakage current I L in LPCVD polysilicon MOSFET's is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed. The model predictions are consistent with measured current-voltage characteristics. Physical insight afforded by the model implies device design modifications to control and reduce I L , and indicates when the back-surface leakage component is significant.

Anomalous leakage current in LPCVD PolySilicon MOSFET's

A theory of conduction in polycrystalline silicon is presented. The present approach fundamentally differs from previous theories in its treatment of the grain boundary. This theory regards the grain boundary as amorphous semiconductor in equilibrium contact with crystalline grain. The model explains the electrical properties of polysilicon in terms of the electronic and structural parameters of the material and is in excellent agreement with the experimental data. The formulation is applicable for arbitrary grain size, temperature, doping concentration, and applied voltage. Specifically, the temperature dependence of resistivity is explained in terms of conduction channels inherent in the amorphous grain boundary. Also, this paper explicitly compares the previous emission theories with the present model in terms of voltage partition scheme and I - V predictions.

Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system&#8212;Part I: Small signal theory

During ac hot-carrier stress, the direction of the transient current flow is demonstrated to be important in device degradation as well as the amount of substrate current generated in transient periods.

The case of AC stress in the hot-carrier effect

A process is disclosed with integrated steps for fabricating bipolar and CMOS transistors. Mask, patterning and implanting steps are highly integrated to reduce the fabrication complexity. The integrated steps include a split level polysilicon step wherein PMOS and NMOS gate conductors and a bipolar emitter structure is formed. The polysilicon is heavily doped which forms MOS transistor gate electrodes, and another high impurity concentration area which is later diffused into an underlying bipolar base region. Small area, high performance transistors can be fabricated with laterally extending contact strips. Alignment of electrode metallization patterns is thus less critical.

Integrated bipolar and CMOS transistor with titanium nitride interconnections

Disclosed is a bipolar transistor and a method of fabrication thereof compatible with MOSFET devices. A transistor intrinsic base region (54) is formed in the face of a semiconductor well (22), and covered with a gate oxide (44). The gate oxide (44) is opened, and doped polysilicon is deposited thereover to form a polyemitter structure (68) in contact with the base region (54). Sidewall oxide (82, 84) is formed on the polyemitter structure (60). A collector region (90) and an extrinsic base region (100) are formed in the semiconductor well (22) and self aligned with respect to opposing side edges of the polyemitter sidewall oxide (82, 84).

Bipolar transistor fabrication utilizing CMOS techniques

Polysilicon resistors and integrated circuits are brought to zero or positive temperature coefficient (TCR) by a combination of laser annealing and ionic hydrogen plasma treatment.

Rajiv R. Shah

Papers

Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part I: Small signal theory

The case of AC stress in the hot-carrier effect

Integrated bipolar and CMOS transistor with titanium nitride interconnections

Bipolar transistor fabrication utilizing CMOS techniques

Method of making zero temperature coefficient of resistance resistors

Rajiv R. Shah

Papers

Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system&#8212;Part I: Small signal theory

The case of AC stress in the hot-carrier effect

Integrated bipolar and CMOS transistor with titanium nitride interconnections

Bipolar transistor fabrication utilizing CMOS techniques

Method of making zero temperature coefficient of resistance resistors

Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part I: Small signal theory