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Ramesh Dhere

Researcher at National Renewable Energy Laboratory

Publications -  113
Citations -  2279

Ramesh Dhere is an academic researcher from National Renewable Energy Laboratory. The author has contributed to research in topics: Thin film & Cadmium telluride photovoltaics. The author has an hindex of 26, co-authored 113 publications receiving 2191 citations.

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Fabrication procedures and process sensitivities for CdS/CdTe solar cells

TL;DR: In this paper, the laboratory processes used to fabricate CdS/CdTe solar cells at the National Renewable Energy Laboratory were described, including low-pressure chemical vapor deposited SnO2, chemical-bath deposited CdTe, close-spaced sublimated CdCl2 treatment, and an acid-contact etch, followed by application of a doped-graphite paste.
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Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells☆

TL;DR: In this paper, the effect of Cu diffusion from a ZnTe:Cu contact interface on the carrier lifetime of a CdS/CdTe photovoltaic solar cell was studied.
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Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency

TL;DR: In this article, the authors discuss initial results in which process changes expected to alter the as-deposited defects are also observed to affect junction evolution and device functionality, as well as how these process changes affect device functionality.
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Perspectives on the pathways for cadmium telluride photovoltaic module manufacturers to address expected increases in the price for tellurium

TL;DR: In this paper, the authors examined the sensitivity of total CdTe module manufacturing prices to the price of this minor metal and found that module manufacturers could conceivably absorb a gradual increase in Te prices up to an order of magnitude higher than what was typical for 2011 without significantly compromising their near to mid-term competitive position within the PV industry.
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Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation

TL;DR: In this article, a new time-resolved photoluminescence (TRPL) analysis method for the determination of minority carrier lifetime τB was proposed based on subbandgap excitation (two-photon excitation, or 2PE) and allows selective lifetime determination at the surface or in the bulk of semiconductor absorbers.