Showing papers by "Renato Giacomini published in 2012"

Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs

Abstract: The best-explored integrated magnetic field sensors are built with planar IC technologies, which do not allow 3D sensing in standard fabrication processes due to their bi-dimensional nature Unlike planar devices, FinFETs can be used to sense magnetic fields in any direction This work proposes and evaluates the use of FinFETs as magnetic sensors The sensibility of FinFET differential arrays to lateral and vertical magnetic fields is quantified This work also proposes the L-shaped gate, to improve the sensor performance

An analytical estimation model for the spreading resistance of Double-Gate FinFETs

Abstract: The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations.

Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs

Abstract: This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance.