J
Joao Antonio Martino
Researcher at University of São Paulo
Publications - 449
Citations - 2429
Joao Antonio Martino is an academic researcher from University of São Paulo. The author has contributed to research in topics: Transconductance & Silicon on insulator. The author has an hindex of 20, co-authored 432 publications receiving 2132 citations. Previous affiliations of Joao Antonio Martino include Centro Universitário da FEI & Katholieke Universiteit Leuven.
Papers
More filters
Journal ArticleDOI
Analog performance and application of graded-channel fully depleted SOI MOSFETs
TL;DR: In this article, the performances of single-transistor operational transconductance amplifiers (OTAs) implemented using GC and a conventional fully depleted silicon-on-insulator nMOSFETs are compared.
Journal ArticleDOI
Graded-channel fully depleted Silicon-On-Insulator nMOSFET for reducing the parasitic bipolar effects
TL;DR: In this paper, an extended study of the occurrence of inherent parasitic bipolar effects in conventional and graded-channel fully depleted silicon-on-insulator nMOSFETs is carried out.
Journal ArticleDOI
Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
Paula Ghedini Der Agopian,Joao Antonio Martino,Rita Rooyackers,Anne Vandooren,Eddy Simoen,Cor Claeys +5 more
TL;DR: In this article, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer is presented.
Journal ArticleDOI
Temperature impact on the tunnel fet off-state current components
Paula Ghedini Der Agopian,M. D. V. Martino,Sebastião G. Dos Santos Filho,Joao Antonio Martino,Rita Rooyackers,Daniele Leonelli,Cor Claeys +6 more
TL;DR: In this article, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally, and the results show that at high temperature, an unexpected offstate current occurred due to the thermal leakage current through the drain/channel junction.
Journal ArticleDOI
Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
Felipe Lucas da Silva Neves,Paula Ghedini Der Agopian,Joao Antonio Martino,Bogdan Cretu,Rita Rooyackers,Anne Vandooren,Eddy Simoen,Aaron Thean,Cor Claeys +8 more
TL;DR: In this paper, the experimental input characteristics with different source compositions (Si and Ge) and different HfO2 thicknesses in the gate-stack (2 and 3 nm) are presented.