R
Richard Hammond
Researcher at TSMC
Publications - 34
Citations - 1735
Richard Hammond is an academic researcher from TSMC. The author has contributed to research in topics: Insulator (electricity) & Semiconductor device. The author has an hindex of 16, co-authored 34 publications receiving 1725 citations.
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Patent
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
TL;DR: In this article, the authors describe a method for fabricating FETs with impurity-free regions of the strained material layers of the semiconductor, where the impurities are kept free of impurities that can interdiffuse from adjacent portions of the FET.
Patent
Method of selective removal of SiGe alloys
TL;DR: In this paper, a method for forming buried channel devices and surface channel devices on a heterostructure semiconductor substrate is described, which includes the steps of providing a structure including a first layer having a first oxidation rate disposed over a second layer with a second oxidation rate, reacting said first layer to form a sacrificial layer, and removing said sacrificial layers to expose said second layer.
Patent
RF Circuits Including Transistors Having Strained Material Layers
TL;DR: In this paper, field effect transistors (FETs) are used for processing radio frequency (RF) and microwave signals, which have one or more strained channel layers disposed on one of or more planarized substrate layers.