R
Robert E. Ellefson
Researcher at Syracuse University
Publications - 15
Citations - 325
Robert E. Ellefson is an academic researcher from Syracuse University. The author has contributed to research in topics: Mass spectrometry & Ion. The author has an hindex of 9, co-authored 15 publications receiving 319 citations.
Papers
More filters
Journal Article
Recommended practice for the calibration of mass spectrometers for partial pressure analysis
James A. Basford,M. D. Boeckmann,Robert E. Ellefson,Albert R. Filippelli,David H. Holkeboer,L. Lieszkovszky,C. M. Stupak +6 more
TL;DR: In this article, the authors present an introduction to partial pressure analyzers and how they work, equipment needed for calibration, instrument setup prior to calibration and the measurement of sensitivity and linearity by various methods.
Journal ArticleDOI
Miniature quadrupole residual gas analyzer for process monitoring at milliTorr pressures
TL;DR: In this article, the authors describe a quadrupole residual gas analyzer (RGA) which is scaled down by a factor of 7 to operate at pressures up to 10 mTorr.
Journal ArticleDOI
Recommended Practice for the Calibration of Mass Spectrometers
James A. Basford,Mark D. Boeckmann,Robert E. Ellefson,Albert R. Filippelli,David H. Holkeboer,Laslo Lieszkovsky,Catherine M. Stupak +6 more
TL;DR: In this article, the authors present an introduction to partial pressure analyzers and how they work, equipment needed for calibration, instrument setup prior to calibration and the measurement of sensitivity and linearity by various methods.
Journal ArticleDOI
Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection
Xi Li,Marc Schaepkens,Gottlieb S. Oehrlein,Robert E. Ellefson,Louis C. Frees,Norbert Mueller,Norman Korner +6 more
TL;DR: In this article, the ion energy distributions of the dominant ions were measured as a function of process conditions and appearance potential mass spectrometry was performed to measure trends of the radical densities for C2F6 plasmas.
Journal ArticleDOI
Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas
TL;DR: In this article, the etch rate of silicon nitride (Si3N4) in the afterglow of fluorine-containing plasmas is strongly enhanced when both nitrogen and oxygen are added to the remote discharge.